Misorientation effect on the monolayer terrace topography of (100) InP substrates annealed under a PH3/H2ambient and homoepitaxial layers grown by metalorganic chemical vapor deposition

1995 ◽  
Vol 78 (8) ◽  
pp. 5048-5052 ◽  
Author(s):  
V. Merlin ◽  
Tran Minh Duc ◽  
G. Younes ◽  
Y. Monteil ◽  
V. Souliere ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Homoepitaxial Layers ◽  
Inp Substrates ◽  
Metalorganic Chemical

Metalorganic Chemical Vapor Deposition of Magneto-Optical Ce:YIG Thin Films

1998 ◽  
Vol 517 ◽  
Author(s):  
Yi-Qun Li ◽  
Mondher Cherif ◽  
Jankang Huang ◽  
Wayne Liu ◽  
Qiushui Chen
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Sputter Deposited ◽  
Iron Garnet ◽  
Inp Substrates ◽  
Metalorganic Chemical

AbstractThe deposition technologies of rare-earth substituted yttrium iron garnet (RE:YIG) thin films with a large Faraday rotation and their applications are briefly overviewed. Highly cerium substituted YIG films were successfully deposited on (111) GGG, (211) GGG, (100) MgO, and MgO buffered GaAs and InP substrates by single-liquid-source metalorganic chemical vapor deposition. Ce-YIG thin films can be epitaxially grown on lattice matched GGG substrates at a temperature as low as 600°C. They have excellent optical and magnetic properties along with high Faraday rotations. The films deposited on single crystal (100) MgO substrates are polycrystalline and have good magnetic properties. Sputter deposited MgO buffer layer was demonstrated for preventing the decomposition and chemical reaction of GaAs and LnP substrates resulting in successful deposition of YIG films on GaAs and InP substrates at a substrate temperature of 550°C. The films grown on MgO buffered GaAs substrates possessed good magnetic properties.

GaN homoepitaxial layers grown by metalorganic chemical vapor deposition

1999 ◽  
Vol 75 (9) ◽  
pp. 1276-1278 ◽  
Author(s):  
M. Leszczynski ◽  
B. Beaumont ◽  
E. Frayssinet ◽  
W. Knap ◽  
P. Prystawko ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Homoepitaxial Layers ◽  
Metalorganic Chemical

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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