scholarly journals Fabrication and low temperature thermoelectric properties of NaxCoO2 (x=0.68 and 0.75) epitaxial films by the reactive solid-phase epitaxy

2007 ◽  
Vol 90 (6) ◽  
pp. 061917 ◽  
Author(s):  
W. J. Chang ◽  
C. C. Hsieh ◽  
T. Y. Chung ◽  
S. Y. Hsu ◽  
K. H. Wu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermoelectric Properties ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Solid Phase Epitaxy

Reduction of Interface Reactions in the Low-Temperature Solid-Phase Epitaxy of ScAlMgO4 on Al2O3(0001)

2020 ◽  
Vol 20 (9) ◽  
pp. 6001-6007
Author(s):  
Yajin Chen ◽  
Peng Zuo ◽  
Yingxin Guan ◽  
M. Humed Yusuf ◽  
Susan E. Babcock ◽  
...  
Keyword(s):  
Low Temperature ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Interface Reactions

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

2004 ◽  
Vol 19 (7) ◽  
pp. 2137-2143 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Conditions ◽  
Thermal Annealing Process

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

Hetero-epitaxial growth of stoichiometry tunable Si1−xGexfilm via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process

CrystEngComm ◽  
2015 ◽  
Vol 17 (33) ◽  
pp. 6269-6273 ◽  
Author(s):  
Chuan-Jung Lin ◽  
Sung-Yen Wei ◽  
Chien-Chung Hsu ◽  
Sheng-Min Yu ◽  
Wen-Ching Sun ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Formation of Ultra Shallow p+/n Junction in Silicon Using a Combination of Low-Temperature Solid Phase Epitaxy and Non-Melt Double-Pulsed Green Laser Annealing

2013 ◽  
Vol 52 (2R) ◽  
pp. 026501 ◽  
Author(s):  
Siti Rahmah Aid ◽  
Shuhei Hara ◽  
Yusuke Shigenaga ◽  
Takumi Fukaya ◽  
Yuki Tanaka ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Annealing ◽  
Solid Phase ◽  
Green Laser ◽  
Solid Phase Epitaxy
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