Hetero-epitaxial growth of stoichiometry tunable Si1−xGexfilm via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process

CrystEngComm ◽  
2015 ◽  
Vol 17 (33) ◽  
pp. 6269-6273 ◽  
Author(s):  
Chuan-Jung Lin ◽  
Sung-Yen Wei ◽  
Chien-Chung Hsu ◽  
Sheng-Min Yu ◽  
Wen-Ching Sun ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Reduction of Interface Reactions in the Low-Temperature Solid-Phase Epitaxy of ScAlMgO4 on Al2O3(0001)

2020 ◽  
Vol 20 (9) ◽  
pp. 6001-6007
Author(s):  
Yajin Chen ◽  
Peng Zuo ◽  
Yingxin Guan ◽  
M. Humed Yusuf ◽  
Susan E. Babcock ◽  
...  
Keyword(s):  
Low Temperature ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Interface Reactions

Low-Temperature, Solid-Phase Epitaxial Growth of Amorphized, Non-Stoichiometric GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
K. B. Belay ◽  
D. L. Llewellyn ◽  
M. C. Ridgway
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Present Report ◽  
Time Resolved ◽  
Crystalline Layer ◽  
Transmission Electron ◽  
High Doses ◽  
Insulating Properties

AbstractNon-stoichiometric GaAs layers with semi-insulating properties can be produced by low-temperature molecular beam epitaxy or ion implantation. The latter is the subject of the present report wherein the solid-phase epitaxial growth of amorphized, non-stoichiometric GaAs layers has been investigated with time-resolved reflectivity, Rutherford backscattering spectrometry and transmission electron microscopy. GaAs substrates were implanted with Ga and/or As ions and annealed in air at a temperature of 260°C. The recrystallized material was composed of a thin, crystalline layer bordered by a thick, twinned layer. Non-stoichiometry results in a roughening of the amorphous/crystalline interface and the transformation from planar to non-planar regrowth. The onset of the transformation and the rate thereof can increase with an increase in non-stoichiometry. Non-stoichiometry can be achieved on a macroscopic scale via Ga or As implants or on a microscopic scale via Ga and As implants. The influence of the latter is greatest at low doses whilst the former dominates at high doses.

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

Hot-Wire Chemical Vapor Deposition for Epitaxial Silicon Growth On Large-Grained Polycrystalline Silicon Templates

2003 ◽  
Vol 762 ◽  
Author(s):  
M. S. Mason ◽  
C.M. Chen ◽  
H.A. Atwater
Keyword(s):  
Epitaxial Growth ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Solid Phase Epitaxy ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Transmission Electron ◽  
Silicon Growth

AbstractWe investigate low-temperature epitaxial growth of thin silicon films on Si [100] substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300 nm thick epitaxial layers at 300°C on silicon [100] substrates using a high H2:SiH4 ratio of 70:1. Transmission electron microscopy confirms that the films are epitaxial with a periodic array of stacking faults and are highly twinned after approximately 240 nm of growth. Evidence is also presented for epitaxial growth on polycrystalline SNSPE templates under the same growth conditions.

scholarly journals Pressure-Enhanced Solid Phase Epitaxy: Implications for Point Defect Mechanisms

1990 ◽  
Vol 205 ◽  
Author(s):  
Guo-Quan Lu ◽  
Eric Nygren ◽  
Michael J. Aziz
Keyword(s):  
Hydrostatic Pressure ◽  
Point Defect ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Dangling Bond ◽  
Amorphous Phases ◽  
Plausible Model ◽  
Bond Mechanism

AbstractWe have measured the effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG) rates of undoped Ge(100) and Si(100) into their respective self-implanted amorphous phases. We found that pressure enhances the growth process in both Si and Ge, with activation volumes equal to -3.3 ± 0.3 cm3/mole for Si and -6.3 ± 0.60 cm3/mole for Ge. The results of this and other experiments are inconsistent with all bulk point-defect mechanisms, but are consistent with all interface point-defect mechanisms, proposed to date for thermal SPEG. A kinetic analysis of the Spaepen-Turnbull dangling bond mechanism shows it to be a highly plausible model for the growth process.

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