Evaluation of interfacial-layer capacitance from fast polarization retention in ferroelectric thin films

2007 ◽  
Vol 101 (5) ◽  
pp. 056103 ◽  
Author(s):  
A. Q. Jiang ◽  
Y. Y. Lin ◽  
T. A. Tang
1997 ◽  
Vol 493 ◽  
Author(s):  
A. Gruverman ◽  
S. A. Prakash ◽  
S. Aggarwal ◽  
R. Ramesh ◽  
O. Auciello ◽  
...  

ABSTRACTScanning force microscopy (SFM) was applied to direct nanoscale investigation of the mechanism of retention loss in ferroelectric thin films. Experiments were conducted by performing local polarization reversal within an individual grain with subsequent imaging of a resulting domain structure at various time intervals. A conductive SFM tip was used for domain switching and imaging in the SFM piezoresponse mode.


1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-225-Pr9-228
Author(s):  
J. H. Yi ◽  
P. Thomas ◽  
M. Manier ◽  
J. P. Mercurio ◽  
I. Jauberteau ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  

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