scholarly journals Manipulating exciton fine structure in quantum dots with a lateral electric field

2007 ◽  
Vol 90 (4) ◽  
pp. 041101 ◽  
Author(s):  
B. D. Gerardot ◽  
S. Seidl ◽  
P. A. Dalgarno ◽  
R. J. Warburton ◽  
D. Granados ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Fine Structure ◽  
Electric Field ◽  
Lateral Electric Field

Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots

2005 ◽  
Vol 86 (4) ◽  
pp. 041907 ◽  
Author(s):  
K. Kowalik ◽  
O. Krebs ◽  
A. Lemaître ◽  
S. Laurent ◽  
P. Senellart ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Fine Structure ◽  
Electric Field ◽  
Self Assembled

The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots

2007 ◽  
Vol 49 (10) ◽  
pp. 1995-1998 ◽  
Author(s):  
E. S. Moskalenko ◽  
M. Larsson ◽  
K. F. Karlsson ◽  
P. O. Holtz ◽  
B. Monemar ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Luminescence Intensity ◽  
Lateral Electric Field

Influence of a lateral electric field on the optical properties of InAs quantum dots

2006 ◽  
Vol 32 (1-2) ◽  
pp. 73-76 ◽  
Author(s):  
D. Reuter ◽  
V. Stavarache ◽  
A.D. Wieck ◽  
M. Schwab ◽  
R. Oulton ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Electric Field ◽  
Inas Quantum Dots ◽  
Lateral Electric Field

scholarly journals Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

2021 ◽  
Vol 129 (5) ◽  
pp. 054301
Author(s):  
M. Hrytsaienko ◽  
M. Gallart ◽  
M. Ziegler ◽  
O. Crégut ◽  
S. Tamariz ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Carrier Dynamics ◽  
Lateral Confinement ◽  
Uv Range

High-performance near-infrared photodetectors based on C3N quantum dots integrated with single-crystal graphene

2021 ◽  
Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Single Crystal ◽  
High Performance ◽  
Near Infrared ◽  
Fast Response ◽  
Local Electric Field ◽  
Infrared Photodetectors ◽  
Photocurrent Response

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.

Sign in / Sign up

Export Citation Format

Share Document