Effect of interface layer, curing temperature, and polarization on the hole transport in poly(3-hexylthiophene) thin films

2007 ◽  
Vol 90 (2) ◽  
pp. 023501 ◽  
Author(s):  
Pankaj Kumar ◽  
Suresh Chand ◽  
S. Dwivedi ◽  
M. N. Kamalasanan
Keyword(s):  
Thin Films ◽  
Interface Layer ◽  
Hole Transport ◽  
Curing Temperature

scholarly journals Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22199-22205
Author(s):  
Rachel L. Wilson ◽  
Thomas J. Macdonald ◽  
Chieh-Ting Lin ◽  
Shengda Xu ◽  
Alaric Taylor ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hole Transport ◽  
Blocking Layer ◽  
The Novel ◽  
Electron Blocking Layer

We describe CVD of nickel oxide (NiO) thin films using a new precursor [Ni(dmamp′)2], synthesised using a readily commercially available dialkylaminoalkoxide ligand (dmamp′), which is applied to synthesis of a hole transport-electron blocking layer.

scholarly journals Fabrication and Photovoltaic Properties of Organic Solar Cell Based on Zinc Phthalocyanine

Energies ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 962 ◽  
Author(s):  
Zahoor Ul Islam ◽  
Muhammad Tahir ◽  
Waqar Adil Syed ◽  
Fakhra Aziz ◽  
Fazal Wahab ◽  
...  
Keyword(s):  
Thin Films ◽  
Thick Film ◽  
Indium Tin Oxide ◽  
Hole Transport ◽  
Transport Layer ◽  
Zinc Phthalocyanine ◽  
Hole Transport Layer ◽  
Interfacial Resistance ◽  
Ito Cell ◽  
Photovoltaic Properties

Herein, we report thin films’ characterizations and photovoltaic properties of an organic semiconductor zinc phthalocyanine (ZnPc). To study the former, a 100 nm thick film of ZnPc is thermally deposited on quartz glass by using vacuum thermal evaporator at 1.5 × 10−6 mbar. Surface features of the ZnPc film are studied by using scanning electron microscope (SEM) with in situ energy dispersive x-ray spectroscopy (EDS) analysis and atomic force microscope (AFM) which reveal uniform film growth, grain sizes and shapes with slight random distribution of the grains. Ultraviolet-visible (UV-vis) and Fourier Transform Infrared (FTIR) spectroscopies are carried out of the ZnPc thin films to measure its optical bandgap (1.55 eV and 3.08 eV) as well as to study chemical composition and bond-dynamics. To explore photovoltaic properties of ZnPc, an Ag/ZnPc/PEDOT:PSS/ITO cell is fabricated by spin coating a 20 nm thick film of hole transport layer (HTL)—poly-(3,4-ethylenedioxythiophene) poly(styrene sulfonic acid) (PEDOT:PSS)—on indium tin oxide (ITO) substrate followed by thermal evaporation of a 100 nm layer of ZnPc and 50 nm silver (Ag) electrode. Current-voltage (I-V) properties of the fabricated device are measured in dark as well as under illumination at standard testing conditions (STC), i.e., 300 K, 100 mW/cm2 and 1.5 AM global by using solar simulator. The key device parameters such as ideality factor (n), barrier height ( ϕ b ), junction/interfacial resistance (Rs) and forward current rectification of the device are measured in the dark which exhibit the formation of depletion region. The Ag/ZnPc/PEDOT:PSS/ITO device demonstrates good photovoltaic characteristics by offering 0.48 fill factor (FF) and 1.28 ± 0.05% power conversion efficiency (PCE), η.

Effects of Pb Doping on Hole Transport Properties and Thin-Film Transistor Characteristics of SnO Thin Films

2015 ◽  
Vol 4 (3) ◽  
pp. Q26-Q30 ◽  
Author(s):  
Min Liao ◽  
Zewen Xiao ◽  
Fan-Yong Ran ◽  
Hideya Kumomi ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Thin Film Transistor ◽  
Hole Transport ◽  
Pb Doping

Solid-State Dye Sensitized Solar Cells: Effect of Hole Transport Material Properties to the Photovoltaic Performance

2013 ◽  
Vol 667 ◽  
pp. 317-323 ◽  
Author(s):  
Muhamad Nur Amalina ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Solid State ◽  
Material Properties ◽  
Spin Coating ◽  
Photovoltaic Performance ◽  
Dye Sensitized Solar Cells ◽  
Hole Transport ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

The improvement of solid-state dye sensitized solar cells requires identification and understanding of hole transport material properties at various deposition process that limit the energy conversion efficiency. A well-studied of this hole collectors properties, a high efficiency ss-DSSC is highly achievable. In this research work, the copper (I) iodide (CuI) had been deposited by spin coating and mist-atomization technique. The thin films characteristics of surface morphology and electrical properties and its effect to the photovoltaic performance were investigated. The thin films morphology examined by FESEM shows smaller CuI crystal size deposited by spin coating (S1) of ~30nm. Even though, smaller particle size of hole conductor is desirable in order to achieve high pore penetration, the thin film thickness and the electrical resistivity are also essential. The CuI thin films deposited by mist-atomization (M1) shows a low resistivity of 1.77 x 10-1 Ωcm which will greatly affect the device performance. The photovoltaic performance of ss-DSSC at different method CuI deposition shows the highest efficiency of 1.05% for sample (M1) while the ss-DSSC fabricated with S1 sample shows the lowest conversion efficiency of 0.02%. The appropriate crystals size of CuI, film thickness and the electrical resistivity greatly contributed to the high filling fraction of the porous TiO2 layer and hence the cells performance.

Hole Transport in Self-Organized Oligosilane Thin Films with Highly Ordered Hopping Sites

2001 ◽  
Vol 707 ◽  
Author(s):  
H. Okumoto ◽  
T. Yatabe ◽  
A. Richter ◽  
M. Shimomura ◽  
A. Kaito ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Carrier Transport ◽  
Hole Mobility ◽  
Multilayered Structure ◽  
Hole Transport ◽  
Conjugated Molecules ◽  
Disordered Structures ◽  
Self Organized ◽  
Carrier Transport Properties

ABSTRACTSelf-organized oligosilane thin films possess molecular orientation normal to substrates with multilayered structure. This unique order of σ-conjugated molecules results in good hole transport properties. In the present work, carrier transport properties at low temperature are studied for 1,10-diethyldecamethylsilane polycrystalline films. Even at a temperature as low as 173 K, a time-of-flight transient photocurrent waveform showed a clear plateau and a sharp decay, whose shape is similar to that at room temperature. Their hole mobility followed Arrhe-nius type temperature dependence with a small activation energy of 0.09 eV. The hole mobility of 6.3×10-5cm-2/Vs at 193 K was more than 2 orders of magnitude higher than that of typical polysilanes, which inevitably contain disordered structures hindering smooth carrier transport.

scholarly journals Hole transport in porphyrin thin films

2001 ◽  
Vol 64 (11) ◽  
Author(s):  
Tom J. Savenije ◽  
Albert Goossens
Keyword(s):  
Thin Films ◽  
Hole Transport

scholarly journals Effect of CdSe quantum dots on hole transport in poly(3-hexylthiophene) thin films

2008 ◽  
Vol 92 (26) ◽  
pp. 263504 ◽  
Author(s):  
Kusum Kumari ◽  
Suresh Chand ◽  
Pankaj Kumar ◽  
Shailesh N. Sharma ◽  
V. D. Vankar ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Hole Transport ◽  
Cdse Quantum Dots
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