Effects of Pb Doping on Hole Transport Properties and Thin-Film Transistor Characteristics of SnO Thin Films

2015 ◽  
Vol 4 (3) ◽  
pp. Q26-Q30 ◽  
Author(s):  
Min Liao ◽  
Zewen Xiao ◽  
Fan-Yong Ran ◽  
Hideya Kumomi ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Thin Film Transistor ◽  
Hole Transport ◽  
Pb Doping

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

Thin Film Morphology and GrowthMechanism of Pentacene Thin Film Using Low-Pressure Organic Vapor Deposition

2003 ◽  
Vol 769 ◽  
Author(s):  
Seong Deok Ahn ◽  
Seung Youl Kang ◽  
Yong Eui Lee ◽  
Meyoung Ju Joung ◽  
Chul Am Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Thin Film Transistor ◽  
Low Pressure ◽  
Chamber Pressure ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Organic Vapor

AbstractWe have investigated the growth mechanism and thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). As the source temperature, flow rate of the carrier gas, substrate temperature and chamber pressure were varied, the growth rate, morphology and grain size of the films were differently obtained. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays were discussed

scholarly journals Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

RSC Advances ◽  
2019 ◽  
Vol 9 (54) ◽  
pp. 31386-31397 ◽  
Author(s):  
Nico Koslowski ◽  
Rudolf C. Hoffmann ◽  
Vanessa Trouillet ◽  
Michael Bruns ◽  
Sabine Foro ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Yttrium Oxide ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Aluminium Oxide ◽  
Oxide Formation ◽  
Molecular Precursor ◽  
P Transformation ◽  
Precursor Route

Transformation of a new molecular precursor allows the formation of yttrium oxide under moderate conditions displaying high voltage breakthrough behaviour.

scholarly journals SnS thin films prepared by H2S-free process and its p-type thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (1) ◽  
pp. 015112 ◽  
Author(s):  
Fan-Yong Ran ◽  
Zewen Xiao ◽  
Hidenori Hiramatsu ◽  
Keisuke Ide ◽  
Hideo Hosono ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistor ◽  
Free Process ◽  
Sns Thin Films ◽  
P Type

Potential of Hot Wire CVD for Active Matrix TFT Manufacturing

2009 ◽  
Vol 1153 ◽  
Author(s):  
Ruud E.I. Schropp ◽  
Zomer Silvester Houweling ◽  
Vasco Verlaan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mass Density ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
High Mass ◽  
Hot Wire ◽  
Large Area ◽  
Active Matrix ◽  
Electrical Fields

AbstractHot Wire Chemical Vapor Deposition (HWCVD) is a fast deposition technique with high potential for homogeneous deposition of thin films on large area panels or on continuously moving substrates in an in-line manufacturing system. As there are no high-frequency electromagnetic fields, scaling up is not hampered by finite wavelength effects or the requirement to avoid inhomogeneous electrical fields. Since 1996 we have been investigating the application of the HWCVD process for thin film transistor manufacturing. It already appeared then that these Thin Film Transistors (TFTs) were electronically far more stable than those with Plasma Enhanced (PE) CVD amorphous silicon. Recently, we demonstrated that very compact SiNx layers can be deposited at high deposition rates, up to 7 nm/s. The utilization of source gases in HWCVD of a-Si3N4 films deposited at 3 nm/s is 75 % and 7 % for SiH4 and NH3, respectively. Thin films of stoichiometric a-Si3N4 deposited at this rate have a high mass-density of 3.0 g/cm3. The dielectric properties have been evaluated further in order to establish their suitability for incorporation in TFTs. Now that all TFT layers, namely, the SiNx insulator, the a-Si:H or μc Si:H layers, and the n-type doped thin film silicon can easily be manufactured by HWCVD, the prospect of “all HWCVD” TFTs for active matrix production is within reach. We tested the 3 nm/s SiNx material combined with our protocrystalline Si:H layers deposited at 1 nm/s in ‘all HW’ TFTs. Results show that the TFTs are state of the art with a field-effect mobility of 0.4 cm2/Vs. In order to assess the feasibility of large area deposition we are investigating in-line HWCVD for displays and solar cells.

Hole Transport in Self-Organized Oligosilane Thin Films with Highly Ordered Hopping Sites

2001 ◽  
Vol 707 ◽  
Author(s):  
H. Okumoto ◽  
T. Yatabe ◽  
A. Richter ◽  
M. Shimomura ◽  
A. Kaito ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Carrier Transport ◽  
Hole Mobility ◽  
Multilayered Structure ◽  
Hole Transport ◽  
Conjugated Molecules ◽  
Disordered Structures ◽  
Self Organized ◽  
Carrier Transport Properties

ABSTRACTSelf-organized oligosilane thin films possess molecular orientation normal to substrates with multilayered structure. This unique order of σ-conjugated molecules results in good hole transport properties. In the present work, carrier transport properties at low temperature are studied for 1,10-diethyldecamethylsilane polycrystalline films. Even at a temperature as low as 173 K, a time-of-flight transient photocurrent waveform showed a clear plateau and a sharp decay, whose shape is similar to that at room temperature. Their hole mobility followed Arrhe-nius type temperature dependence with a small activation energy of 0.09 eV. The hole mobility of 6.3×10-5cm-2/Vs at 193 K was more than 2 orders of magnitude higher than that of typical polysilanes, which inevitably contain disordered structures hindering smooth carrier transport.

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