Effect of Ta getter on the quality of MgO tunnel barrier in the polycrystalline CoFeB∕MgO∕CoFeB magnetic tunnel junction

2007 ◽  
Vol 90 (1) ◽  
pp. 012505 ◽  
Author(s):  
Y. S. Choi ◽  
Y. Nagamine ◽  
K. Tsunekawa ◽  
H. Maehara ◽  
D. D. Djayaprawira ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Barrier

scholarly journals Molecular coupling competing with defects within insulator of the magnetic tunnel junction-based molecular spintronics devices

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Pawan Tyagi ◽  
Hayden Brown ◽  
Andrew Grizzle ◽  
Christopher D’Angelo ◽  
Bishnu R. Dahal
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Barrier ◽  
Molecular Device ◽  
Molecular Spintronics ◽  
Ferromagnetic Electrodes ◽  
Covalently Bonded ◽  
Wide Range ◽  
Device Properties ◽  
Theoretical Simulations

AbstractNearly 70 years old dream of incorporating molecule as the device element is still challenged by competing defects in almost every experimentally tested molecular device approach. This paper focuses on the magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) method. An MTJMSD utilizes a tunnel barrier to ensure a robust and mass-producible physical gap between two ferromagnetic electrodes. MTJMSD approach may benefit from MTJ's industrial practices; however, the MTJMSD approach still needs to overcome additional challenges arising from the inclusion of magnetic molecules in conjunction with competing defects. Molecular device channels are covalently bonded between two ferromagnets across the insulating barrier. An insulating barrier may possess a variety of potential defects arising during the fabrication or operational phase. This paper describes an experimental and theoretical study of molecular coupling between ferromagnets in the presence of the competing coupling via an insulating tunnel barrier. We discuss the experimental observations of hillocks and pinhole-type defects producing inter-layer coupling that compete with molecular device elements. We performed theoretical simulations to encompass a wide range of competition between molecules and defects. Monte Carlo Simulation (MCS) was used for investigating the defect-induced inter-layer coupling on MTJMSD. Our research may help understand and design molecular spintronics devices utilizing various insulating spacers such as aluminum oxide (AlOx) and magnesium oxide (MgO) on a wide range of metal electrodes. This paper intends to provide practical insights for researchers intending to investigate the molecular device properties via the MTJMSD approach and do not have a background in magnetic tunnel junction fabrication.

Simulation Study on Understanding the Spin Transport in MgO Adsorbed Graphene Based Magnetic Tunnel Junction

SPIN ◽  
2016 ◽  
Vol 06 (03) ◽  
pp. 1650011 ◽  
Author(s):  
Ashish Raturi ◽  
Sudhanshu Choudhary
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Barrier ◽  
Pristine Graphene ◽  
First Principles Calculations ◽  
Graphene Nanosheet ◽  
Half Metallic ◽  
Filtration Effect ◽  
Parallel Configuration ◽  
Magneto Resistance

First principles calculations of spin-dependent electronic transport properties of magnetic tunnel junction (MTJ) consisting of MgO adsorbed graphene nanosheet sandwiched between two CrO2 half-metallic ferromagnetic (HMF) electrodes is reported. MgO adsorption on graphene opens bandgap in graphene nanosheet which makes it more suitable for use as a tunnel barrier in MTJs. It was found that MgO adsorption suppresses transmission probabilities for spin-down channel in case of parallel configuration (PC) and also suppresses transmission in antiparallel configuration (APC) for both spin-up and spin-down channel. Tunnel magneto-resistance (TMR) of 100% is obtained at all bias voltages in MgO adsorbed graphene-based MTJ which is higher than that reported in pristine graphene-based MTJ. HMF electrodes were found suitable to achieve perfect spin filtration effect and high TMR. I–V characteristics for both parallel and antiparallel magnetization states of junction are calculated. High TMR suggests its usefulness in spin valves and other spintronics-based applications.

scholarly journals Effect of MgO Underlying Layer on the Growth of GaOx Tunnel Barrier in Epitaxial Fe/GaOx/(MgO)/Fe Magnetic Tunnel Junction Structure

Sensors ◽  
2017 ◽  
Vol 17 (10) ◽  
pp. 2424 ◽  
Author(s):  
Sai Krishna Narayananellore ◽  
Naoki Doko ◽  
Norihiro Matsuo ◽  
Hidekazu Saito ◽  
Shinji Yuasa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Barrier ◽  
Junction Structure
Sign in / Sign up

Export Citation Format

Share Document