scholarly journals Effect of MgO Underlying Layer on the Growth of GaOx Tunnel Barrier in Epitaxial Fe/GaOx/(MgO)/Fe Magnetic Tunnel Junction Structure

Sensors ◽  
2017 ◽  
Vol 17 (10) ◽  
pp. 2424 ◽  
Author(s):  
Sai Krishna Narayananellore ◽  
Naoki Doko ◽  
Norihiro Matsuo ◽  
Hidekazu Saito ◽  
Shinji Yuasa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Barrier ◽  
Junction Structure

scholarly journals Molecular coupling competing with defects within insulator of the magnetic tunnel junction-based molecular spintronics devices

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Pawan Tyagi ◽  
Hayden Brown ◽  
Andrew Grizzle ◽  
Christopher D’Angelo ◽  
Bishnu R. Dahal
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Barrier ◽  
Molecular Device ◽  
Molecular Spintronics ◽  
Ferromagnetic Electrodes ◽  
Covalently Bonded ◽  
Wide Range ◽  
Device Properties ◽  
Theoretical Simulations

AbstractNearly 70 years old dream of incorporating molecule as the device element is still challenged by competing defects in almost every experimentally tested molecular device approach. This paper focuses on the magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) method. An MTJMSD utilizes a tunnel barrier to ensure a robust and mass-producible physical gap between two ferromagnetic electrodes. MTJMSD approach may benefit from MTJ's industrial practices; however, the MTJMSD approach still needs to overcome additional challenges arising from the inclusion of magnetic molecules in conjunction with competing defects. Molecular device channels are covalently bonded between two ferromagnets across the insulating barrier. An insulating barrier may possess a variety of potential defects arising during the fabrication or operational phase. This paper describes an experimental and theoretical study of molecular coupling between ferromagnets in the presence of the competing coupling via an insulating tunnel barrier. We discuss the experimental observations of hillocks and pinhole-type defects producing inter-layer coupling that compete with molecular device elements. We performed theoretical simulations to encompass a wide range of competition between molecules and defects. Monte Carlo Simulation (MCS) was used for investigating the defect-induced inter-layer coupling on MTJMSD. Our research may help understand and design molecular spintronics devices utilizing various insulating spacers such as aluminum oxide (AlOx) and magnesium oxide (MgO) on a wide range of metal electrodes. This paper intends to provide practical insights for researchers intending to investigate the molecular device properties via the MTJMSD approach and do not have a background in magnetic tunnel junction fabrication.

Grain boundary mediated oxidation and interlayer dipolar coupling in a magnetic tunnel junction structure

2003 ◽  
Vol 67 (13) ◽  
Author(s):  
J. W. Freeland ◽  
D. J. Keavney ◽  
R. Winarski ◽  
P. Ryan ◽  
J. M. Slaughter ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Tunnel Junction ◽  
Dipolar Coupling ◽  
Magnetic Tunnel Junction ◽  
Junction Structure ◽  
Mediated Oxidation
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