Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p‐In0.15Ga0.85N∕p‐GaN layer

2007 ◽  
Vol 101 (1) ◽  
pp. 013711 ◽  
Author(s):  
Ja-Soon Jang ◽  
Tae-Yeon Seong
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Thermally Stable ◽  
Low Resistance

Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

2005 ◽  
Vol 8 (11) ◽  
pp. G320 ◽  
Author(s):  
Woong-Ki Hong ◽  
June-O Song ◽  
Hyun-Gi Hong ◽  
Keun-Yong Ban ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type

Low-resistance and highly transparent Ni/indium-tin oxide ohmic contacts to phosphorous-doped p-type ZnO

2005 ◽  
Vol 86 (21) ◽  
pp. 211902 ◽  
Author(s):  
Soon-Hyung Kang ◽  
Dae-Kue Hwang ◽  
Seong-Ju Park
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
P Type

Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN

2001 ◽  
Vol 79 (18) ◽  
pp. 2925-2927 ◽  
Author(s):  
Ray-Hua Horng ◽  
Dong-Sing Wuu ◽  
Yi-Chung Lien ◽  
Wen-How Lan
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
High Transparency ◽  
Low Resistance ◽  
P Type

scholarly journals Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode

2016 ◽  
Vol 2016 ◽  
pp. 1-7
Author(s):  
Zhanxu Chen ◽  
Wenjie Liu ◽  
Wei Wan ◽  
Gengyan Chen ◽  
Yongzhu Chen ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Three Dimensional ◽  
Light Output ◽  
Light Extraction Efficiency ◽  
Experimental Result ◽  
Indium Tin Oxide Electrode ◽  
Light Emitting ◽  
Ito Electrode

The indium tin oxide (ITO) has been widely applied in light emitting diodes (LEDs) as the transparent current spreading layer. In this work, the performance of GaN-based blue light LEDs with nanopatterned ITO electrode is investigated. Periodic nanopillar ITO arrays are fabricated by inductive coupled plasma etching with the mask of polystyrene nanosphere. The light extraction efficiency (LEE) of LEDs can be improved by nanopatterned ITO ohmic contacts. The light output intensity of the fabricated LEDs with nanopatterned ITO electrode is 17% higher than that of the conventional LEDs at an injection current of 100 mA. Three-dimensional finite difference time domain simulation matches well with the experimental result. This method may serve as a practical approach to improving the LEE of the LEDs.

scholarly journals Transparent Ohmic Contacts on p-GaN Using an Indium Tin Oxide Overlayer

2003 ◽  
Vol 0 (1) ◽  
pp. 214-218 ◽  
Author(s):  
Soo Young Kim ◽  
Ho Won Jang ◽  
Jong-Lam Lee
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts

Improvement in performance of GaN-based light-emitting diodes with indium tin oxide based transparent ohmic contacts

Displays ◽  
2007 ◽  
Vol 28 (3) ◽  
pp. 129-132 ◽  
Author(s):  
Y. Yao ◽  
C. Jin ◽  
Z. Dong ◽  
Z. Sun ◽  
S.M. Huang
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting

Low resistance indium tin oxide contact to n-GaAs nanowires

2014 ◽  
Vol 29 (5) ◽  
pp. 054002 ◽  
Author(s):  
J Zhang ◽  
A C E Chia ◽  
R R LaPierre
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Low Resistance ◽  
Gaas Nanowires

Low resistance indium tin oxide films on large scale glass substrate

1992 ◽  
Vol 10 (4) ◽  
pp. 1682-1686 ◽  
Author(s):  
T. Oyama ◽  
N. Hashimoto ◽  
J. Shimizu ◽  
Y. Akao ◽  
H. Kojima ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Glass Substrate ◽  
Large Scale ◽  
Oxide Films ◽  
Low Resistance ◽  
Tin Oxide Films
Sign in / Sign up

Export Citation Format

Share Document