Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN

2001 ◽  
Vol 79 (18) ◽  
pp. 2925-2927 ◽  
Author(s):  
Ray-Hua Horng ◽  
Dong-Sing Wuu ◽  
Yi-Chung Lien ◽  
Wen-How Lan
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
High Transparency ◽  
Low Resistance ◽  
P Type

Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

2005 ◽  
Vol 8 (11) ◽  
pp. G320 ◽  
Author(s):  
Woong-Ki Hong ◽  
June-O Song ◽  
Hyun-Gi Hong ◽  
Keun-Yong Ban ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type

Low-resistance and highly transparent Ni/indium-tin oxide ohmic contacts to phosphorous-doped p-type ZnO

2005 ◽  
Vol 86 (21) ◽  
pp. 211902 ◽  
Author(s):  
Soon-Hyung Kang ◽  
Dae-Kue Hwang ◽  
Seong-Ju Park
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
P Type

Pt/Indium Tin Oxide Ohmic Contacts to Arsenic-Doped p-Type ZnO Layers

2005 ◽  
Vol 8 (7) ◽  
pp. G167 ◽  
Author(s):  
Sang-Ho Kim ◽  
Jeong-Tae Maeng ◽  
Chel-Jong Choi ◽  
Jae Hyeon Leem ◽  
Myung Soo Han ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
P Type

Evaluation of metal/indium-tin-oxide for transparent low-resistance contacts to p-type GaN

2012 ◽  
Vol 51 (23) ◽  
pp. 5596 ◽  
Author(s):  
Wenting Hou ◽  
Christoph Stark ◽  
Shi You ◽  
Liang Zhao ◽  
Theeradetch Detchprohm ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Low Resistance ◽  
P Type

scholarly journals Low Resistance Optically Transparent Contacts to p–type GaN Using Oxidized Ni/Au and ITO for LED Application

2000 ◽  
Vol 639 ◽  
Author(s):  
C. H. Lin ◽  
D. L. Hibbard ◽  
A. Au ◽  
H. P. Lee ◽  
Z. J. Dong ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Light Emission ◽  
Dramatic Improvement ◽  
Operating Voltage ◽  
Low Resistance ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

ABSTRACTWe report on a high transparency low resistance contact to p-GaN composed of a thin oxidized Ni/Au bilayer overcoated with indium tin oxide (NiO/Au/ITO). The NiO/Au/ITO layer shows a specific contact resistivity, c, of 1.8 × 10−3 Ωcm2 that is nearly ten times lower than conventional Ni/Au annealed under N2. Measurements on fully processed LEDs with a NiO/Au/ITO current spreading layer (CSL) show an operating voltage of around 4 V at 20 mA that is comparable to LEDs fabricated with a conventional Ni/Au CSL and a dramatic improvement over the previous ITO data. LED top surface light emission through the NiO/Au/ITO CSL is shown to be greater than that from LEDs with a conventional semi-transparent Ni/Au CSL. Taken together, these results demonstrate the feasibility of using NiO/Au/ITO as a CSL for high performance GaN LEDs.

Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN

2010 ◽  
Vol 39 (5) ◽  
pp. 494-498 ◽  
Author(s):  
H. Guo ◽  
H. B. Andagana ◽  
X. A. Cao
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
P Type

Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts

2005 ◽  
Vol 17 (2) ◽  
pp. 291-293 ◽  
Author(s):  
J.-O. Song ◽  
Dong-Seok Leem ◽  
Joon Seop Kwak ◽  
Y. Park ◽  
S.W. Chae ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Luminous Intensity ◽  
Light Emitting ◽  
P Type
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