Surface potential shield with aperture structure to improve potential measurement accuracy of scanning Kelvin probe microscopy

2006 ◽  
Vol 89 (26) ◽  
pp. 263504 ◽  
Author(s):  
Zhitao Yang ◽  
Michael G. Spencer
Keyword(s):  
Surface Potential ◽  
Measurement Accuracy ◽  
Kelvin Probe ◽  
Potential Measurement ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Scanning Kelvin Probe

scholarly journals Surface potential imaging of CNT-FET devices by scanning Kelvin probe microscopy

2008 ◽  
Vol 100 (5) ◽  
pp. 052085 ◽  
Author(s):  
H Hosoi ◽  
M Nakamura ◽  
Y Yamada ◽  
K Sueoka ◽  
K Mukasa
Keyword(s):  
Surface Potential ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Scanning Kelvin Probe

Measurement of the Electric Potential on Amorphous Silicon and Amorphous Silicon Germanium Alloy Thin-Film Solar Cells by Scanning Kelvin Probe Microscopy

2004 ◽  
Vol 808 ◽  
Author(s):  
C.-S. Jiang ◽  
H. R. Moutinho ◽  
Q. Wang ◽  
M. M. Al-Jassim ◽  
B. Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Alloy Thin Film ◽  
Surface Charges ◽  
Kelvin Probe ◽  
Potential Measurement ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Scanning Kelvin Probe

ABSTRACTWe report on direct measurements of surface potentials on cross sections of a-Si:H and a-SiGe:H n-i-p solar cells using scanning Kelvin probe microscopy. External bias voltage (Vb)induced changes in the electric field distributions in the i layer were further deduced by taking the derivative of the Vb-induced potential changes. This procedure avoids the effect of surface charges or surface Fermi-level pinning on the potential measurement. We found that the electric field does not distribute uniformly through the i layer of a-Si:H cells, but it is stronger in the regions near the n and p layers than in the middle of the i layer. The non-uniformity is reduced by incorporating buffer layers at the n/i and i/p interfaces in the a-Si:H solar cells. For a-SiGe:H solar cells, the electric field at the p side of the i layer is much stronger than at the n side and the middle. The non-uniformity becomes more severe when a profiled Ge content is incorporated with a high Ge content on the p side. We speculate that the increase in defect density with increasing of Ge content causes charge accumulation at the i/p interface.

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