scholarly journals Influence of film structure and light on charge trapping and dissipation dynamics in spun-cast organic thin-film transistors measured by scanning Kelvin probe microscopy

2012 ◽  
Vol 100 (26) ◽  
pp. 263305 ◽  
Author(s):  
L. C. Teague ◽  
M. A. Loth ◽  
J. E. Anthony
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
Film Structure ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Scanning Kelvin Probe

A scanning Kelvin probe study of charge trapping in zone-cast pentacene thin film transistors

2008 ◽  
Vol 20 (2) ◽  
pp. 025203 ◽  
Author(s):  
T Hallam ◽  
C M Duffy ◽  
T Minakata ◽  
M Ando ◽  
H Sirringhaus
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
Kelvin Probe ◽  
Scanning Kelvin Probe

Investigation on organic thin film transistors (TFT) by Kelvin probe force microscopy (KPFM)

2020 ◽  
Author(s):  
Mélanie Brouillard ◽  
Ute Zschieschang ◽  
Nicolas Bogdan Bercu ◽  
Olivier Simonetti ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Kelvin Probe Force Microscopy ◽  
Organic Thin Film ◽  
Kelvin Probe ◽  
Force Microscopy

scholarly journals Local Charge Trapping in Conjugated Polymers Resolved by Scanning Kelvin Probe Microscopy

2009 ◽  
Vol 103 (25) ◽  
Author(s):  
Toby Hallam ◽  
MiJung Lee ◽  
Ni Zhao ◽  
Iris Nandhakumar ◽  
Martijn Kemerink ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Charge Trapping ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Local Charge ◽  
Scanning Kelvin Probe

60Co Gamma–Ray Irradiation Effects on Pentacene-Based Organic Thin-Film Transistors

2011 ◽  
Vol 687 ◽  
pp. 576-579 ◽  
Author(s):  
Li Cai ◽  
Toshio Hirao ◽  
Hiroaki Yano ◽  
Zong Fan Duan ◽  
Hideharu Takayanagi ◽  
...  
Keyword(s):  
Thin Film ◽  
Total Dose ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Radiation Effects ◽  
Rebound Effect ◽  
Charge Trapping ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film

Electrical characterization of 60Co γ-ray radiation effects on pentacene-based organic thin-film-transistors having two kinds of gate insulator have been carried out. For transistors with SiO2 gate insulator, the threshold voltage shifts are consistent with positive charge trapping in the oxide and a “rebound” effect is observed. This “rebound” effect is attributed to the negatively charged interface traps generated during irradiation. For polyimide gate insulator, the threshold voltage continually decreases with an increasing total-dose. At total-dose of 1200 Gy (Si), for the SiO2 gate insulator, the field-effect mobility decreased by almost 80%, and for polyimide gate insulator, it decreased by 40%.

Oligothiophene-Based Organic Thin-Film Transistors: A Kelvin Probe Force Microscopy Study of the Electronic Properties

2012 ◽  
Vol 1435 ◽  
Author(s):  
N.S. Afsharimani ◽  
B. Nysten
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Kelvin Probe ◽  
Force Microscopy

ABSTRACTIn the past decades organic thin film transistors (OTFTs) have been notably studied due to their interesting properties. Not only they can be processed by simple methods such as inkjet printing but also open the doors to new applications for cheap plastic electronics including electronic tags, biosensors, flexible screens,… However, the measured field-effect mobility in OTFTs is relatively low compared to inorganic devices. Generally, such low field-effect mobility values result from extrinsic effects such as grain boundaries or imperfect interfaces with source and drain electrodes. It has been shown that reducing the number of grain boundaries between the source and drain electrodes improves the field effect mobility.1-3 Therefore, it is important to understand the transport mechanisms by studying the structure of organic thin films and local electrical properties within the channel and at the interfaces with source and drain electrodes in order to improve the field-effect mobility in OTFTs. Kelvin probe force microscopy (KPFM) is an ideal tool for that purpose since it allows to simultaneously investigation of the local structure and the electrical potential distribution in electronic devices. In this work, the structure and the electrical properties of OTFTs based on dioctylterthiophene (DOTT) were studied. The transistors were fabricated by spin-coating of DOTT on the transistor structures with treated (silanized) and untreated channel oxide. The potential profiles across the channel and at the metal-electrode interfaces were measured by KPFM. The effect of surface treatment on hysteresis effects was also studied. Smaller crystals and a lower threshold voltage were observed for the silanized devices. Hysteresis effects appeared to be less important in modified devices compared to the untreated ones.

Nanoscale Measurements of Electronic Properties in Organic Thin Film Transistors

2005 ◽  
Vol 871 ◽  
Author(s):  
Oren Tal ◽  
Yossi Rosenwaks ◽  
Yohai Roichman ◽  
Nir Tessler ◽  
Calvin K. Chan ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Direct Detection ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Kelvin Probe ◽  
Threshold Voltage Shift ◽  
Effective Threshold ◽  
Nanoscale Measurements

AbstractKelvin probe force microscopy was used for extraction of the threshold and the pinch off voltages in organic thin film transistors. The first was determined by direct detection of the charge accumulation onset and the latter by a direct observation of the pinch off region formation. In addition, an effective threshold voltage shift can be extracted from the pinch-off voltage as a function of charge concentration. The dependence of the effective threshold voltage on the gate voltage must be considered when calculating charge carrier concentrations in organic thin film transistors.

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