Influence of residual impurity background on the nonradiative recombination processes in high purity InAs∕GaSb superlattice photodiodes

2006 ◽  
Vol 89 (24) ◽  
pp. 243517 ◽  
Author(s):  
E. C. F. da Silva ◽  
D. Hoffman ◽  
A. Hood ◽  
B. M. Nguyen ◽  
P. Y. Delaunay ◽  
...  
Keyword(s):  
High Purity ◽  
Nonradiative Recombination ◽  
Residual Impurity ◽  
Recombination Processes

Radiative and Nonradiative Recombination Processes in GaN-Based Semiconductors

2001 ◽  
Vol 183 (1) ◽  
pp. 41-50 ◽  
Author(s):  
Y. Kawakami ◽  
K. Omae ◽  
A. Kaneta ◽  
K. Okamoto ◽  
T. Izumi ◽  
...  
Keyword(s):  
Nonradiative Recombination ◽  
Recombination Processes

Radiative and nonradiative recombination processes in GaNP(As) alloys

2022 ◽  
Vol 276 ◽  
pp. 115567
Author(s):  
M. Wełna ◽  
K. Żelazna ◽  
A. Létoublon ◽  
C. Cornet ◽  
Ł. Janicki ◽  
...  
Keyword(s):  
Nonradiative Recombination ◽  
Recombination Processes

scholarly journals Low-frequency lattice phonons in halide perovskites explain high defect tolerance toward electron-hole recombination

2020 ◽  
Vol 6 (7) ◽  
pp. eaaw7453 ◽  
Author(s):  
Weibin Chu ◽  
Qijing Zheng ◽  
Oleg V. Prezhdo ◽  
Jin Zhao ◽  
Wissam A. Saidi
Keyword(s):  
Low Cost ◽  
Low Frequency ◽  
Nonradiative Recombination ◽  
Defect Tolerance ◽  
Electron Hole ◽  
Surface Hopping ◽  
Recombination Processes ◽  
Halide Perovskites ◽  
Electron And Hole States ◽  
Hole Recombination

Low-cost solution-based synthesis of metal halide perovskites (MHPs) invariably introduces defects in the system, which could form Shockley-Read-Hall (SRH) electron-hole recombination centers detrimental to solar conversion efficiency. Here, we investigate the nonradiative recombination processes due to native point defects in methylammonium lead halide (MAPbI3) perovskites using ab initio nonadiabatic molecular dynamics within surface-hopping framework. Regardless of whether the defects introduce a shallow or deep band state, we find that charge recombination in MAPbI3 is not enhanced, contrary to predictions from SRH theory. We demonstrate that this strong tolerance against defects, and hence the breakdown of SRH, arises because the photogenerated carriers are only coupled with low-frequency phonons and electron and hole states overlap weakly. Both factors appreciably decrease the nonadiabatic coupling. We argue that the soft nature of the inorganic lattice with small bulk modulus is key for defect tolerance, and hence, the findings are general to other MHPs.

Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals

2019 ◽  
Vol 13 (1) ◽  
pp. 012004 ◽  
Author(s):  
Kazunobu Kojima ◽  
Fumimasa Horikiri ◽  
Yoshinobu Narita ◽  
Takehiro Yoshida ◽  
Hajime Fujikura ◽  
...  
Keyword(s):  
Nonradiative Recombination ◽  
Carrier Recombination ◽  
Carbon Impurities ◽  
Recombination Processes ◽  
Recombination Centers

scholarly journals Radiative and nonradiative recombination processes in lattice-matched (Cd,Zn)O/(Mg,Zn)O multiquantum wells

2000 ◽  
Vol 77 (11) ◽  
pp. 1632-1634 ◽  
Author(s):  
T. Makino ◽  
C. H. Chia ◽  
Nguen T. Tuan ◽  
Y. Segawa ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Nonradiative Recombination ◽  
Recombination Processes ◽  
Lattice Matched

Efficient Nonradiative Recombination Centers in MBE-Grown Si and SiGe/Si Heterostructures

1995 ◽  
Vol 378 ◽  
Author(s):  
W. M. Chen ◽  
I. A. Buyanova ◽  
A. Henry ◽  
W.-X. Ni ◽  
G. V. Hansson ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Mbe Growth ◽  
Temperature Growth ◽  
Positive Ions ◽  
Carrier Recombination ◽  
Recombination Processes ◽  
Nonradiative Defect ◽  
Recombination Centers ◽  
Low Symmetry

AbstractWe carry out an investigation of grown-in nonradiative defects in Si and SiGe/Si heterostructures grown by molecular-beam-epitaxy (MBE). A number of such defects are observed by the optical detection of magnetic resonance (ODMR) technique, in samples with various structures and growth conditions. These defects are shown to provide efficient nonradiative shunt paths for carrier recombination, competing with and reducing radiative recombination processes. It is revealed that the dominant nonradiative defect is a low-symmetry vacancy-related complex, evident from a characteristic hyperfine structure due to 29Si ligands (with nuclear spin I=1/2 and natural abundance of 4.67 %) connected to the dangling bonds. The introduction of these defects is believed to be largely due to a low surface adatom mobility during the low temperature growth. By varying the substrate bias during the MBE growth, it is shown that the formation of these nonradiative defects can be effectively enhanced by exposure to accelerated positive ions, presumably dominated by the Si+ ions. Effects of hydrogenation on these defects are also studied.

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