Stability of 3C-SiC surfaces under diamond growth conditions

2007 ◽  
Vol 101 (1) ◽  
pp. 014904 ◽  
Author(s):  
J. C. Arnault ◽  
S. Delclos ◽  
S. Saada ◽  
N. Tranchant ◽  
Ph. Bergonzo
Author(s):  
J C Walmsley ◽  
A R Lang

Interest in the defects and impurities in natural diamond, which are found in even the most perfect stone, is driven by the fact that diamond growth occurs at a depth of over 120Km. They display characteristics associated with their origin and their journey through the mantle to the surface of the Earth. An optical classification scheme for diamond exists based largely on the presence and segregation of nitrogen. For example type Ia, which includes 98% of all natural diamonds, contain nitrogen aggregated into small non-paramagnetic clusters and usually contain sub-micrometre platelet defects on {100} planes. Numerous transmission electron microscope (TEM) studies of these platelets and associated features have been made e.g. . Some diamonds, however, contain imperfections and impurities that place them outside this main classification scheme. Two such types are described.First, coated-diamonds which possess gem quality cores enclosed by a rind that is rich in submicrometre sized mineral inclusions. The transition from core to coat is quite sharp indicating a sudden change in growth conditions, Figure 1. As part of a TEM study of the inclusions apatite has been identified as a major constituent of the impurity present in many inclusion cavities, Figure 2.


Author(s):  
D.P. Malta ◽  
E.A. Fitzgerald ◽  
J.B. Posthill ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
...  

A large effort continues in the development of diamond growth technologies for the production of electronic-grade diamond epitaxy. Diamond has several properties such as a wide band gap (5.48 eV) and high thermal conductivity (2000 W m-1K-1) that make it desirable for electronic applications. Characterization of diamond with cathodoluminescence (CL) spectroscopy yields information on impurity and defect distributions with both spatial and energy resolution, providing insight into the growth process.Diamond films were grown by plasma-enhanced chemical vapor deposition (PECVD) on natural type Ia 1mm × 1mm × 0.25mm diamond substrates. The results of microstructural studies on this type substrate are discussed elsewhere in these proceedings. Two films were selected for CL analysis based on their strikingly different surface morphologies but similar growth conditions. Both were grown for 6 hours at a substrate temperature of ∽ 750°C and a pressure of 5 Torr. The gas mixtures were varied: CO/CH4/H2 was used in one case and CH4/H2 in the other.


1989 ◽  
Vol 162 ◽  
Author(s):  
M. W. Geis

ABSTRACTDiamond has an electric-field breakdown 20 times that of Si and GaAs, and a saturated velocity twice that of Si. This results in a predicted cut off frequency for high-power diamond transistors 40 times that of similar devices made of Si or GaAs. Boron is the only known impurity that can be used to lightly dope diamond. This p-type dopant has an activation energy of 0.3 to 0.4 eV, which results in high-resistivity material that is undesirable for devices. However, heavily boron doped diamond has a very small activation energy and a low resistivity and is of device quality. Transistors can be designed that use only undoped and heavily doped diamond. One of the steps in a device fabrication sequence is homoepitaxial diamond growth. Lightly and heavily doped homoepitaxial diamond films were characterized by scanning and transmission electron microscopy, x-ray diffraction, measurements of resistivity as a function of temperature, and secondary ion mass spectroscopy. It was found that under appropriate growth conditions these films are of device quality.


2017 ◽  
Vol 72 ◽  
pp. 1-6 ◽  
Author(s):  
M.A. Lobaev ◽  
A.M. Gorbachev ◽  
S.A. Bogdanov ◽  
A.L. Vikharev ◽  
D.B. Radishev ◽  
...  

1999 ◽  
Vol 14 (2) ◽  
pp. 578-583 ◽  
Author(s):  
Katsuyuki Okada ◽  
Shojiro Komatsu ◽  
Seiichiro Matsumoto

A 13.56 MHz low pressure inductively coupled plasma (ICP) has been applied to prepare diamond films. The Faraday shield drastically suppressed the electrostatic coupling, which frequently causes contamination due to the etching of the quartz tube. The characterizations of the obtained deposits by scanning electron microscopy (SEM), transmission electron diffraction (TED), and reflection high energy electron diffraction (RHEED) revealed that the deposits are composed of microcrystalline diamond and disordered microcrystalline graphite. The CO additive to a CH4/H2 plasma brought about the morphological change from a scale-like deposit to a particle one. Besides, the number of encountered particles was increased with an increase of CO additive. The TED and RHEED observations showed that non-diamond carbon was effectively removed with an increase of CO additive. These results indicate that oxygen-contained radicals produced by the addition of CO play an effective role in the removal of non-diamond carbon in the diamond growth conditions and that the CO additive makes the supersaturation degree of carbon large.


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