Improvements in the device characteristics of random-network single-walled carbon nanotube transistors by using high-κ gate insulators
2006 ◽
Vol 45
(8A)
◽
pp. 6524-6527
◽
2020 ◽
Vol 81
◽
pp. 488-495
2016 ◽
Vol 5
(9)
◽
pp. M93-M98
◽