Improvements in the device characteristics of random-network single-walled carbon nanotube transistors by using high-κ gate insulators

2006 ◽  
Vol 89 (20) ◽  
pp. 203505 ◽  
Author(s):  
Megumi Ohishi ◽  
Masashi Shiraishi ◽  
Kenji Ochi ◽  
Yoshihiro Kubozono ◽  
Hiromichi Kataura
ACS Nano ◽  
2018 ◽  
Vol 12 (6) ◽  
pp. 5895-5902 ◽  
Author(s):  
Severin Schneider ◽  
Maximilian Brohmann ◽  
Roxana Lorenz ◽  
Yvonne J. Hofstetter ◽  
Marcel Rother ◽  
...  

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