scholarly journals Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction

2006 ◽  
Vol 100 (9) ◽  
pp. 093522 ◽  
Author(s):  
J. Ibáñez ◽  
R. Kudrawiec ◽  
J. Misiewicz ◽  
M. Schmidbauer ◽  
M. Henini ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nitrogen Incorporation ◽  
Gaas Substrates ◽  
Photoreflectance Spectroscopy

High resolution X-ray diffraction studies of CdxHg1-xTe/CdTe epitaxial layers grown by MOVPE on GaAs substrates

1990 ◽  
Vol 101 (1-4) ◽  
pp. 572-578 ◽  
Author(s):  
A.M. Keir ◽  
A. Graham ◽  
S.J. Barnett ◽  
J. Giess ◽  
M.G. Astles ◽  
...  
Keyword(s):  
High Resolution ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates

High resolution X-ray diffraction investigation of epitaxially grown SrTiO 3 thin films by laser-MBE

2009 ◽  
Vol 33 (11) ◽  
pp. 949-953
Author(s):  
Zhai Zhang-Yin ◽  
Wu Xiao-Shan ◽  
Jia Quan-Jie
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Laser Mbe

scholarly journals High-resolution X-ray diffraction analysis of strain relaxation in epitaxial oxide thin films

2008 ◽  
Vol 64 (a1) ◽  
pp. C106-C106
Author(s):  
R. Guinebretiere ◽  
F. Conchon ◽  
A. Boulle ◽  
C. Girardot ◽  
S. Pignard ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Diffraction Analysis ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray ◽  
Epitaxial Oxide

scholarly journals Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Yu-Chiao Lin ◽  
Ikai Lo ◽  
Hui-Chun Shih ◽  
Mitch M. C. Chou ◽  
D. M. Schaadt
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Anisotropic Growth ◽  
X Ray Diffraction ◽  
X Ray

M-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [112-0]. According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate. The formation of Li5GaO4 would influence the surface morphology and crystal quality.

THE EFFECT OF FILM THICKNESS ON THE MICROSTRUCTURE OF La0.5Ca0.5MnO3 FILMS

2002 ◽  
Vol 16 (23) ◽  
pp. 3439-3447 ◽  
Author(s):  
X. M. CHEN ◽  
Y. WANG ◽  
C. X. LIU ◽  
Y. N. ZHAO ◽  
Z. H. MAI ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
High Resolution ◽  
Critical Thickness ◽  
Interface Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface And Interface ◽  
Atomic Force ◽  
Different Thickness

La 0.5 Ca 0.5 MnO 3 (LCMO) thin films grown on SrTiO 3 substrate with different thickness were investigated using high resolution X-ray diffraction, small angle reflectivity, and atomic force microscope (AFM). All the films are demonstrated to be c-axis oriented. The surface and interface structure of the films were obtained. It was found that the surface morphology of the films strongly depends on the thickness, and the film will crack when the thickness of the film reach a critical thickness. The surface roughness of the films increases with the thickness. The interface between the films and the substrates are very clear. There exists a non-designed cap layer on the surface of the LCMO layer.

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