Effective creation of oxygen vacancies as an electron carrier source in tin-doped indium oxide films by plasma sputtering

2006 ◽  
Vol 100 (11) ◽  
pp. 113701 ◽  
Author(s):  
S. N. Luo ◽  
A. Kono ◽  
N. Nouchi ◽  
F. Shoji
2018 ◽  
Vol 228 ◽  
pp. 04003
Author(s):  
Zhenglin Li ◽  
Fuyuan Si ◽  
Miaomiao Wang ◽  
Weigang He ◽  
Yuwei Zhang

Field electron emission currents from nanostructured films always have unsatisfied stability. This paper introduces a photocurrent treatment technique to enhance the filed emission properties, and gives a kind of nanostructured indium oxide film suitable for the technique. The products were prepared on patterned ITO glass substrate by using chemical vapor deposition method. With the increase of reaction time, the morphologies of the films changed from cocoonlike particles to hybrid thin films, and finally flowerlike nanostructures were formed. Photocurrent and field electron emission characteristics of the products have been studied. After photocurrent treatment, the flowerlike indium oxide films show stable field emission current (fluctuation is less than 5%), low field emission threshold (at 7.5 V/m, the current density is 1 mA/cm2) and high enhancement factor of electrical field of 778. The field emission test results validated that the photocurrent treated flowerlike indium oxide films may act as electron emitters and applied in display applications.


1988 ◽  
Vol 33-34 ◽  
pp. 898-904 ◽  
Author(s):  
Lata Gupta ◽  
Abhai Mansingh ◽  
P.K. Srivastava

2015 ◽  
Vol 44 (8) ◽  
pp. 2719-2724 ◽  
Author(s):  
Cansong Zhao ◽  
Zhao Li ◽  
Wei Mi ◽  
Caina Luan ◽  
Xianjin Feng ◽  
...  

1988 ◽  
Vol 167 (1-2) ◽  
pp. L27-L30 ◽  
Author(s):  
Ryoki Nomura ◽  
Akiko Moritake ◽  
Kouichi Kanaya ◽  
Haruo Matsuda

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