The influence of beam energy and oxidation on quantitative carbide analysis in the scanning electron microscope

2006 ◽  
Vol 100 (11) ◽  
pp. 114902 ◽  
Author(s):  
C. Rodenburg ◽  
W. M. Rainforth
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
Carbide Analysis ◽  
Scanning Electron

Edge Penetration Effects in the Low-Loss Electron Image in the SEM

1988 ◽  
Vol 46 ◽  
pp. 202-203
Author(s):  
Oliver C. Wells
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
Secondary Electron ◽  
Sharp Edge ◽  
Beam Diameter ◽  
Low Loss ◽  
Additional Information ◽  
Electron Image ◽  
Scanning Electron

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.

scholarly journals Imaging of Shallow Surface Topography by the Low-Loss Electron (LLE) Method in the Scanning Electron Microscope

2002 ◽  
Vol 10 (6) ◽  
pp. 24-27
Author(s):  
Oliver C. Wells
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Surface Topography ◽  
Beam Energy ◽  
Secondary Electron ◽  
Low Loss ◽  
Information Depth ◽  
Sharp Edges ◽  
Scanning Electron

The low-loss electron (LLE) method in the scanning electron microscope (SEM) was proposed by Dennis McMullan in 1953: “…the beam from the specimen could be restricted to the electrons which have lost only small amounts of energy and which have therefore travelled only short distances through the specimen.”Subsequent studies showed that the LLE method gives different image contrasts from the more familiar secondary electron (SE) method: (i) it is less affected by specimen charging; (ii) has a shallower information depth for a given beam energy; (iii) shows less serious penetration effects at sharp edges; (iv) shows stronger channeling contrast; and (v) Is better for showing shallow surface topography.

Improved in-lens low-loss electron detector for the Scanning Electron Microscope

1991 ◽  
Vol 49 ◽  
pp. 480-481
Author(s):  
Oliver C. Wells ◽  
Eric Munro
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
High Field ◽  
Incident Beam ◽  
Objective Lens ◽  
Low Loss ◽  
Incident Beam Energy ◽  
The Magnetic Field ◽  
Scanning Electron

We have built an improved version of in-lens low-loss electron (LLE) detector for the scanning electron microscope (SEM) in which the LLE are energy-filtered by the focusing field. The sample is in the high-field region of a condenser-objective lens (Fig. 1). The fastest scattered electrons are then confined by the magnetic field of the lens into a region with a well-defined outer surface (Fig. 1(b)). A detector is moved under micrometer control to be just inside this surface. In this way, only the fastest scattered electrons (which are the LLE) are collected. In the earlier work, the detector was a flat aluminized garnet scintillator. This showed that the method did work but required that the incident beam energy E0 should be greater than the energy threshold of the scintillator.

Multi-Beam Ion Microscopy

2012 ◽  
Vol 20 (5) ◽  
pp. 10-15 ◽  
Author(s):  
David C. Joy
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
Relative Strength ◽  
The Past ◽  
Ion Microscopy ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Fundamental Limitation ◽  
Scanning Electron

Over the past fifty years the scanning electron microscope (SEM) has established itself as the most versatile and productive tool for imaging and microanalysis in many areas of science and technology, and some seventy-thousand instruments generate millions of micrographs every day. Scanning electron microscopes do, however, have one fundamental limitation in that the only experimental variable available to the operator is the choice of the accelerating voltage. Although the ability to vary beam energy is both necessary and important, it is an unfortunate fact that changing the beam energy also alters many aspects of performance: imaging resolution, relative strength of different signal components, depth of beam penetration, capabilities of the various analytical systems, and the severity of charging and beam-induced damage. This makes it difficult or impossible to optimize the interaction of interest.

The Alteration of the Pore Spaces in Sandstones

1973 ◽  
Vol 31 ◽  
pp. 210-211
Author(s):  
R. E. Ferrell ◽  
G. G. Paulson
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
The Other ◽  
Coarse Grained ◽  
Depositional Fabric ◽  
Soluble Components ◽  
Scanning Electron ◽  
Shape And Size

The pore spaces in sandstones are the result of the original depositional fabric and the degree of post-depositional alteration that the rock has experienced. The largest pore volumes are present in coarse-grained, well-sorted materials with high sphericity. The chief mechanisms which alter the shape and size of the pores are precipitation of cementing agents and the dissolution of soluble components. Each process may operate alone or in combination with the other, or there may be several generations of cementation and solution.The scanning electron microscope has ‘been used in this study to reveal the morphology of the pore spaces in a variety of moderate porosity, orthoquartzites.

The Broad Applications of the Scanning Electron Microscope

1969 ◽  
Vol 27 ◽  
pp. 20-21
Author(s):  
C. T. Nightingale ◽  
S. E. Summers ◽  
T. P. Turnbull
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Light Microscopy ◽  
Surface Topography ◽  
Great Depth ◽  
Resolving Power ◽  
Depth Of Field ◽  
Pictorial Representations ◽  
Scanning Electron

The ease of operation of the scanning electron microscope has insured its wide application in medicine and industry. The micrographs are pictorial representations of surface topography obtained directly from the specimen. The need to replicate is eliminated. The great depth of field and the high resolving power provide far more information than light microscopy.

Observability of Very Thick Specimen by Using Transmission Scanning Electron Microscope

1971 ◽  
Vol 29 ◽  
pp. 26-27
Author(s):  
K. Shibatomi ◽  
T. Yamanoto ◽  
H. Koike
Keyword(s):  
Electron Microscope ◽  
Image Quality ◽  
Scanning Electron Microscope ◽  
Chromatic Aberration ◽  
Image Contrast ◽  
Objective Lens ◽  
Thick Specimen ◽  
Transmission Electron ◽  
Scanning Electron

In the observation of a thick specimen by means of a transmission electron microscope, the intensity of electrons passing through the objective lens aperture is greatly reduced. So that the image is almost invisible. In addition to this fact, it have been reported that a chromatic aberration causes the deterioration of the image contrast rather than that of the resolution. The scanning electron microscope is, however, capable of electrically amplifying the signal of the decreasing intensity, and also free from a chromatic aberration so that the deterioration of the image contrast due to the aberration can be prevented. The electrical improvement of the image quality can be carried out by using the fascionating features of the SEM, that is, the amplification of a weak in-put signal forming the image and the descriminating action of the heigh level signal of the background. This paper reports some of the experimental results about the thickness dependence of the observability and quality of the image in the case of the transmission SEM.

Resolution of a Transmitted Electron Image Formed by A Scanning Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 386-387
Author(s):  
S. Takashima ◽  
H. Hashimoto ◽  
S. Kimoto
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Chromatic Aberration ◽  
Objective Lens ◽  
Specimen Thickness ◽  
Probe Diameter ◽  
Transmission Electron ◽  
Electron Image ◽  
Conventional Transmission Electron Microscope ◽  
Scanning Electron

The resolution of a conventional transmission electron microscope (TEM) deteriorates as the specimen thickness increases, because chromatic aberration of the objective lens is caused by the energy loss of electrons). In the case of a scanning electron microscope (SEM), chromatic aberration does not exist as the restrictive factor for the resolution of the transmitted electron image, for the SEM has no imageforming lens. It is not sure, however, that the equal resolution to the probe diameter can be obtained in the case of a thick specimen. To study the relation between the specimen thickness and the resolution of the trans-mitted electron image obtained by the SEM, the following experiment was carried out.

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

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