Temperature dependence of Raman scattering in GaMnN

2006 ◽  
Vol 89 (16) ◽  
pp. 161920 ◽  
Author(s):  
L. L. Guo ◽  
Y. H. Zhang ◽  
W. Z. Shen
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence

Temperature dependence of Raman scattering from 4H-SiC with hexagonal defects

2011 ◽  
Vol 99 (1) ◽  
pp. 011912 ◽  
Author(s):  
R. Han ◽  
B. Han ◽  
D. H. Wang ◽  
C. Li
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence

Temperature dependence of overtone intensity in raman scattering by liquids

1967 ◽  
Vol 10 (5) ◽  
pp. 41-44
Author(s):  
L. S. Stal'makhova ◽  
N. K. Sidorov ◽  
V. I. Kuryshin
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence

Temperature dependence of Raman scattering and anharmonic properties in LiNbO $$_3$$ 3

2014 ◽  
Vol 117 (3) ◽  
pp. 1147-1152 ◽  
Author(s):  
Ninel Kokanyan ◽  
David Chapron ◽  
Marc D. Fontana
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence

Temperature dependence of Raman scattering and anharmonicity study ofMgF2

1999 ◽  
Vol 59 (2) ◽  
pp. 775-782 ◽  
Author(s):  
A. Perakis ◽  
E. Sarantopoulou ◽  
Y. S. Raptis ◽  
C. Raptis
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence

Study of anharmonicity in pure and doped InSe by Raman scattering

2018 ◽  
Vol 32 (30) ◽  
pp. 1850340 ◽  
Author(s):  
Mahmoud Zolfaghari
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Temperature Variation ◽  
Optical Phonon ◽  
Line Center ◽  
Anharmonic Effect ◽  
Layered Semiconductor ◽  
Center Shift ◽  
Raman Modes ◽  
Quartic Anharmonicity

With the help of temperature dependence, Raman scattering anharmonic effect of various modes of layered semiconductor InSe over temperature range of 20–650 K has been studied. It was found that with an increase in temperature, anharmonicity will increase. Two and three phonons coupling with optical phonon, are used to describe temperature-induced anharmonicity in the linewidth of Raman modes. It was found that the temperature variation of the phonon parameter can be accounted for well by the cubic term in anharmonic model. To describe line-center shift of Raman modes, a model not considering independently cubic and quartic anharmonicity was used. A similar study has been done for InSe doped with different concentration of GaS dopant. The result of temperature study of InSe doped with GaS revealed that in this case anharmonicity increases with an increase in dopant and an increase in temperature.

On the temperature dependence of stimulated Raman scattering in liquids

1972 ◽  
Vol 38 (1) ◽  
pp. 49-50 ◽  
Author(s):  
A.M. Prokhorov ◽  
K.F. Shipilov ◽  
T.A. Shmaonov
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Stimulated Raman Scattering ◽  
Stimulated Raman

Temperature dependence of Raman scattering in stabilized cubic zirconia

1995 ◽  
Vol 51 (1) ◽  
pp. 201-209 ◽  
Author(s):  
Jiguang Cai ◽  
Constantine Raptis ◽  
Yannis S. Raptis ◽  
Evangelos Anastassakis
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Cubic Zirconia
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