AbstractTitanium oxide (TiO2) thin ftlms were formed on a Si substrate by metalorganic decomposition(MOD) at temperatures ranging from 600 to 1100°C. As-deposited films were in the amorphous state and were completely transformed after annealing at 600°C to a crystalline structure with anatase as its main component. During crystallization, a reaction between TiO2 and Si occurred at the interface, which resulted in the formation of a thin interfacial SiO2 layer. Capacitance-voltage measurement showed good dielectric properties with a maximum dielectric constant of 76 for films annealed at 700°C. For the crystallized TiO2 films, the interface trap density was 1 × 1011 cm−2 eV−1, and the leakage current was 1 × 10−8 A/cm2 at 0.2 MV/cm. The modified structure of TiO2/SiO2/Si is expected to be suitable for the dielectric layer in an integrated circuit in place of conventional SiO2 films.