scholarly journals Studies of minority carrier diffusion length increase in p-type ZnO:Sb

2006 ◽  
Vol 100 (8) ◽  
pp. 086101 ◽  
Author(s):  
O. Lopatiuk-Tirpak ◽  
L. Chernyak ◽  
F. X. Xiu ◽  
J. L. Liu ◽  
S. Jang ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Length Increase ◽  
P Type

Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs

2017 ◽  
Vol 122 (11) ◽  
pp. 115702 ◽  
Author(s):  
M. Niemeyer ◽  
J. Ohlmann ◽  
A. W. Walker ◽  
P. Kleinschmidt ◽  
R. Lang ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
P Type

Gettering of FE By Aluminum In P-Type Cz Silicon

1996 ◽  
Vol 442 ◽  
Author(s):  
S. H. Ahn ◽  
S. Zhao ◽  
A. L. Smith ◽  
L. L. Chalfoun ◽  
M. Platero ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Diffusion Length ◽  
Deep Level ◽  
Early Stage ◽  
Iron Silicide ◽  
Solubility Limit ◽  
Solar Cell Performance ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
P Type

AbstractIn this study, we investigate the gettering process of Fe in p-type Cz silicon after iron has been introduced at the solubility limit at 1000°C. Deep Level Transient Spectroscopy (DLTS) was used to measure [FeB], a fingerprint of [Fei], at the center of samples. The minority carrier diffusion length and lifetime were calculated from Electron Beam Induced Current (EBIC) measurements. The fact that [FeB] is proportional to the negative second power of the minority carrier diffusion length at the high [FeB] regime confirms that FeB donors are the dominant recombination centers limiting solar cell performance with high Fe contamination. By quenching after heat treatment, we can maintain and measure the kinetics and thermodynamics of gettering exclusively. The getter/silicon interface was studied by comparison of the gettering rates of molten Al at 620°C, 700°C, and 800°C, and iron silicide at 700°C. We model Fe gettering with respect to temperature, time, solubility and precipitate nuclei density. In the early stage of Fe gettering, the process is dominated by precipitate formation around oxygen precipitate nuclei. The precipitate density is estimated to be on the order of 5×108cm−3. In later stages, Fe outdiffusion contributes to the [Fei] reduction. The early stage precipitation limits [Fei] reduction after short time to the solubility at the gettering temperature.

scholarly journals Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN

2007 ◽  
Vol 91 (9) ◽  
pp. 092107 ◽  
Author(s):  
O. Lopatiuk-Tirpak ◽  
L. Chernyak ◽  
Y. L. Wang ◽  
F. Ren ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Doping Level ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Length Increase ◽  
Mg Doped

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

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