2‐mm‐gate‐periphery GaN high electron mobility transistor s on SiC and Si substrates: A comparative analysis from a small‐signal standpoint

2021 ◽  
Author(s):  
Anwar Jarndal ◽  
Mohammad Abdul Alim ◽  
Antonio Raffo ◽  
Giovanni Crupi
Keyword(s):  
Comparative Analysis ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Small Signal ◽  
High Electron Mobility ◽  
Si Substrates

scholarly journals COMPARATIVE ANALYSIS OF DIFFERENT CAD METHODS FOR EXTRACTION OF THE HEMT NOISE WAVE MODEL PARAMETERS

2017 ◽  
Vol 16 (2) ◽  
pp. 117
Author(s):  
Vladica Đorđević ◽  
Zlatica Marinković ◽  
Olivera Pronić-Rančić
Keyword(s):  
Comparative Analysis ◽  
Electron Mobility ◽  
Computer Aided Design ◽  
Wave Model ◽  
High Electron Mobility Transistor ◽  
Extraction Methods ◽  
Model Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Noise Modeling

The noise wave model has appeared as a very appropriate model for the purpose of transistor noise modeling at microwave frequencies. The transistor noise wave model parameters are usually extracted from the measured transistor noise parameters by using time-consuming optimization procedures in microwave circuit simulators. Therefore, three different Computer-Aided Design methods that enable more efficient automatic determination of these parameters in the case of high electron-mobility transistors were developed. All of these extraction methods are based on different noise de-embedding procedures, which are described in detail within this paper. In order to validate the presented extraction methods, they were applied for the noise modeling of a specific GaAs high electron-mobility transistor. Finally, the obtained results were used for the comparative analysis of the presented extraction approaches in terms of accuracy, complexity and effectiveness.

scholarly journals A new small signal physical model of InP-based composite channel high electron mobility transistor

2006 ◽  
Vol 55 (7) ◽  
pp. 3617
Author(s):  
Li Xiao ◽  
Liu Liang ◽  
Zhang Hai-Ying ◽  
Yin Jun-Jian ◽  
Li Hai-Ou ◽  
...  
Keyword(s):  
Physical Model ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Small Signal ◽  
High Electron Mobility ◽  
Composite Channel

Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

ACS Nano ◽  
2013 ◽  
Vol 7 (10) ◽  
pp. 9106-9114 ◽  
Author(s):  
Kyung-Ho Kim ◽  
Doo-Seung Um ◽  
Hochan Lee ◽  
Seongdong Lim ◽  
Joonyeon Chang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Orbit Interaction ◽  
High Electron ◽  
Spin Orbit ◽  
High Electron Mobility ◽  
Spin Orbit Interaction ◽  
Si Substrates

scholarly journals Electron-electron interactions in Al0.15Ga0.85N∕GaN high electron mobility transistor structures grown on Si substrates

2007 ◽  
Vol 90 (2) ◽  
pp. 022107 ◽  
Author(s):  
C.-T. Liang ◽  
Li-Hung Lin ◽  
J. Z. Huang ◽  
Zhi-Yao Zhang ◽  
Zhe-Hau Sun ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Interactions
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