Simulation of a tunable optically pumped terahertz intersubband laser with diluted magnetic semiconductors

2006 ◽  
Vol 100 (7) ◽  
pp. 073709 ◽  
Author(s):  
Miloš Popadić ◽  
Vitomir Milanović ◽  
Zoran Ikonić ◽  
Dragan Indjin
2007 ◽  
Vol 21 (08n09) ◽  
pp. 1632-1637 ◽  
Author(s):  
M. LENTZE ◽  
P. GRABS ◽  
J. GEURTS ◽  
K. RÖNNBURG ◽  
E. MOHLER ◽  
...  

We report on the analysis of the influence of carrier concentration on the exchange coupling between conduction band electrons and Mn d-electrons in diluted magnetic semiconductors. For this analysis we employed (i) electronic spin-flip Raman spectroscopy on heavily n-doped ( Zn , Mn ) Se , (ii) time-resolved Faraday rotation on optically pumped ( Cd , Mn ) Te . With increasing carrier density, a reduction of the exchange energy N0α up to 30 % is observed. It is explained by a weakening of the ferromagnetic character of the coupling of conducton-band electrons to the Mn d-electrons by an admixture of an antiferromagnetic (p-d) coupling contribution to the ferromagnetic (s-d) one for q ≠ 0.


1988 ◽  
Vol 49 (C8) ◽  
pp. C8-873-C8-874
Author(s):  
H. J. M. Swagten ◽  
A. Twardowski ◽  
F. A. Arnouts ◽  
W. J. M. de Jonge ◽  
M. Demianiuk

2017 ◽  
Vol 9 (2) ◽  
pp. 02003-1-02003-3
Author(s):  
Rana Mukherji ◽  
◽  
Vishal Mathur ◽  
Arvind Samariya ◽  
Manishita Mukherji ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.


1982 ◽  
Vol 53 (11) ◽  
pp. 7644-7648 ◽  
Author(s):  
G. Dolling ◽  
T. M. Holden ◽  
V. F. Sears ◽  
J. K. Furdyna ◽  
W. Giriat

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