scholarly journals Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals

2006 ◽  
Vol 89 (12) ◽  
pp. 123101 ◽  
Author(s):  
Y. Liu ◽  
T. P. Chen ◽  
H. W. Lau ◽  
J. I. Wong ◽  
L. Ding ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Current Conduction ◽  
Charging Effect

scholarly journals Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals

2008 ◽  
Vol 92 (1) ◽  
pp. 013102 ◽  
Author(s):  
Z. Liu ◽  
T. P. Chen ◽  
Y. Liu ◽  
L. Ding ◽  
M. Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Current Conduction

Charging Effect of Aluminum Nitride Thin Films Containing Al Nanocrystals

2010 ◽  
Vol 10 (1) ◽  
pp. 599-603 ◽  
Author(s):  
Y. Liu ◽  
T. P. Chen ◽  
L. Ding ◽  
J. I. Wong ◽  
M. Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Charging Effect

Piezoelectric Response to Pressure of Aluminum Nitride Thin Films Prepared on Nickel-Based Superalloy Diaphragms

2006 ◽  
Vol 45 (6A) ◽  
pp. 5169-5173 ◽  
Author(s):  
Ichiro Ohshima ◽  
Morito Akiyama ◽  
Akira Kakami ◽  
Tatsuo Tabaru ◽  
Toshihiro Kamohara ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Piezoelectric Response ◽  
Nickel Based Superalloy

Structural, electrical and optical characterizations of yttrium doped aluminum nitride thin films before and after ions irradiation

2021 ◽  
Vol 116 ◽  
pp. 111097
Author(s):  
Asmat Ullah ◽  
Muhammad Usman ◽  
Wang Qingyu ◽  
Iftikhar Ahmad ◽  
Muhammad Maqbool
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Before And After

Electro-mechanical properties of multilayered aluminum nitride and platinum thin films at high temperatures

2019 ◽  
Vol 293 ◽  
pp. 128-135 ◽  
Author(s):  
P. Schmid ◽  
F. Triendl ◽  
C. Zarfl ◽  
S. Schwarz ◽  
W. Artner ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Aluminum Nitride ◽  
High Temperatures

MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2.

ChemInform ◽  
2003 ◽  
Vol 34 (9) ◽  
Author(s):  
Oh-Shim Joo ◽  
Kwang-Deog Jung ◽  
Sung-Hoon Cho ◽  
Je-Hong Kyoung ◽  
Chang-Kyu Ahn ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Single Source ◽  
Single Source Precursor ◽  
New Type

Currents through thin films of aluminum nitride

1968 ◽  
Vol 29 (7) ◽  
pp. 1255-1267 ◽  
Author(s):  
G. Lewicki ◽  
C.A. Mead
Keyword(s):  
Thin Films ◽  
Aluminum Nitride

Growth ofc-axis-oriented aluminum nitride thin films onto different substrates and buffer layers

2014 ◽  
Vol 47 (4) ◽  
pp. 447-453 ◽  
Author(s):  
T. J. A. Mori ◽  
R. D. Della Pace ◽  
A. M. H. de Andrade ◽  
M. A. Corrêa ◽  
P. Stamenov ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Buffer Layers

Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers

2005 ◽  
Vol 892 ◽  
Author(s):  
Qianghua Wang ◽  
Jianzeng Xu ◽  
Changhe Huang ◽  
Gregory W Auner
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Ultrasonic Transducers ◽  
X Ray Diffraction ◽  
Effective Coupling ◽  
Resonant Frequencies ◽  
X Ray ◽  
Coupling Factors ◽  
Sandwiched Structure

AbstractThis paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.

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