Growth ofc-axis-oriented aluminum nitride thin films onto different substrates and buffer layers

2014 ◽  
Vol 47 (4) ◽  
pp. 447-453 ◽  
Author(s):  
T. J. A. Mori ◽  
R. D. Della Pace ◽  
A. M. H. de Andrade ◽  
M. A. Corrêa ◽  
P. Stamenov ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Buffer Layers

{10} edge dislocations in YSZ films grown on (100)MgO by PLD

1994 ◽  
Vol 52 ◽  
pp. 530-531
Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Semiconductor Lasers ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Laser System ◽  
Average Energy ◽  
Target Material ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

Piezoelectric Response to Pressure of Aluminum Nitride Thin Films Prepared on Nickel-Based Superalloy Diaphragms

2006 ◽  
Vol 45 (6A) ◽  
pp. 5169-5173 ◽  
Author(s):  
Ichiro Ohshima ◽  
Morito Akiyama ◽  
Akira Kakami ◽  
Tatsuo Tabaru ◽  
Toshihiro Kamohara ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Piezoelectric Response ◽  
Nickel Based Superalloy

Structural, electrical and optical characterizations of yttrium doped aluminum nitride thin films before and after ions irradiation

2021 ◽  
Vol 116 ◽  
pp. 111097
Author(s):  
Asmat Ullah ◽  
Muhammad Usman ◽  
Wang Qingyu ◽  
Iftikhar Ahmad ◽  
Muhammad Maqbool
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Before And After

Electro-mechanical properties of multilayered aluminum nitride and platinum thin films at high temperatures

2019 ◽  
Vol 293 ◽  
pp. 128-135 ◽  
Author(s):  
P. Schmid ◽  
F. Triendl ◽  
C. Zarfl ◽  
S. Schwarz ◽  
W. Artner ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Aluminum Nitride ◽  
High Temperatures

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2.

ChemInform ◽  
2003 ◽  
Vol 34 (9) ◽  
Author(s):  
Oh-Shim Joo ◽  
Kwang-Deog Jung ◽  
Sung-Hoon Cho ◽  
Je-Hong Kyoung ◽  
Chang-Kyu Ahn ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Single Source ◽  
Single Source Precursor ◽  
New Type

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

YBa2Cu3O7 Thin Films on Polycrystalline Diamond Films with Buffer Layers

1992 ◽  
Vol 275 ◽  
Author(s):  
G. Cui ◽  
C. P. Beetz ◽  
B. A. Lincoln ◽  
P. S. Kirlin
Keyword(s):  
Thin Films ◽  
Diamond Films ◽  
Rf Sputtering ◽  
Polycrystalline Diamond ◽  
Fast Response ◽  
Buffer Layers ◽  
Multichip Modules ◽  
Ir Detectors ◽  
Ybco Films ◽  
First Time

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.

Currents through thin films of aluminum nitride

1968 ◽  
Vol 29 (7) ◽  
pp. 1255-1267 ◽  
Author(s):  
G. Lewicki ◽  
C.A. Mead
Keyword(s):  
Thin Films ◽  
Aluminum Nitride
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