Pulsed radio frequency plasma deposition of a-SiNx:H alloys: Film properties, growth mechanism, and applications

2006 ◽  
Vol 100 (6) ◽  
pp. 063308 ◽  
Author(s):  
R. Vernhes ◽  
O. Zabeida ◽  
J. E. Klemberg-Sapieha ◽  
L. Martinu
2004 ◽  
Vol 831 ◽  
Author(s):  
Naoki Hashimoto ◽  
Naohiro Kikukawa ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa

ABSTRACTWe have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500°C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.


2008 ◽  
Vol 93 (2) ◽  
pp. 023103 ◽  
Author(s):  
Z. F. Wu ◽  
X. M. Wu ◽  
L. J. Zhuge ◽  
X. M. Chen ◽  
X. F. Wang

2010 ◽  
Vol 64 (3) ◽  
pp. 472-474 ◽  
Author(s):  
Z.F. Wu ◽  
X.M. Wu ◽  
L.J. Zhuge ◽  
B. Hong ◽  
X.M. Yang ◽  
...  

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