Imaging the electric properties of InAs∕InP(001) quantum dots capped with a thin InP layer by conductive atomic force microscopy: Evidence of memory effect
A non-volatile resistive memory effect is observed in 2,2′,6,6′-tetraphenyldipyranylidene (DIPO-Ph4), a large planar quinoïd π-conjugated heterocycle, in a field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM).
Correction for ‘A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy’ by Marc Courté et al., RSC Adv., 2017, 7, 3336–3342.
A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy