Voltage drop in an (AlxGa1−x)0.5In0.5P light-emitting diode probed by Kelvin probe force microscopy

2006 ◽  
Vol 89 (10) ◽  
pp. 103522 ◽  
Author(s):  
Kl.-D. Katzer ◽  
W. Mertin ◽  
G. Bacher ◽  
A. Jaeger ◽  
K. Streubel
Keyword(s):  
Voltage Drop ◽  
Light Emitting Diode ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Light Emitting ◽  
Force Microscopy

Local Voltage Drop in a Single Functionalized Graphene Sheet Characterized by Kelvin Probe Force Microscopy

Nano Letters ◽  
2011 ◽  
Vol 11 (9) ◽  
pp. 3543-3549 ◽  
Author(s):  
Liang Yan ◽  
Christian Punckt ◽  
Ilhan A. Aksay ◽  
Wolfgang Mertin ◽  
Gerd Bacher
Keyword(s):  
Graphene Sheet ◽  
Voltage Drop ◽  
Kelvin Probe Force Microscopy ◽  
Functionalized Graphene ◽  
Kelvin Probe ◽  
Force Microscopy

scholarly journals MOVPE-Grown Quantum Cascade Laser Structures Studied by Kelvin Probe Force Microscopy

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 129
Author(s):  
Konstantin Ladutenko ◽  
Vadim Evtikhiev ◽  
Dmitry Revin ◽  
Andrey Krysa
Keyword(s):  
Quantum Cascade Laser ◽  
Potential Distribution ◽  
Voltage Drop ◽  
Core Region ◽  
Kelvin Probe Force Microscopy ◽  
Lasing Threshold ◽  
Linear Potential ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Quantum Cascade

A technique for direct study of the distribution of the applied voltage within a quantum cascade laser (QCL) has been developed. The detailed profile of the potential in the laser claddings and laser core region has been obtained by gradient scanning Kelvin probe force microscopy (KPFM) across the cleaved facets for two mid-infrared quantum cascade laser structures. An InGaAs/InAlAs quantum cascade device with InP claddings demonstrates a linear potential distribution across the laser core region with constant voltage drop across the doped claddings. By contrast, a GaAs/AlGaAs device with AlInP claddings has very uneven potential distribution with more than half of the voltage falling across the claddings and interfaces around the laser core, greatly increasing the overall voltage value necessary to achieve the lasing threshold. Thus, KPFM can be used to highlight design and fabrication flaws of QCLs.

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