Determination of the nonlinear dielectric increment in the Cole-Davidson model

2006 ◽  
Vol 125 (11) ◽  
pp. 114503 ◽  
Author(s):  
Jean-Louis Déjardin ◽  
Jan Jadzyn
Keyword(s):  
Nonlinear Dielectric ◽  
Dielectric Increment

Determination of the Polarities of ZnO Thin Films on Polar and Nonpolar Substrates Using Scanning Nonlinear Dielectric Microscopy

2000 ◽  
Vol 39 (Part 1, No. 5B) ◽  
pp. 3121-3124 ◽  
Author(s):  
Satoshi Kazuta ◽  
Yasuo Cho ◽  
Hiroyuki Odagawa ◽  
Michio Kadota
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Nonlinear Dielectric

Nonlinear Dielectric Relaxation in Solutions of 6CHBT in Nonpolar Medium

1999 ◽  
Vol 54 (10-11) ◽  
pp. 585-589 ◽  
Author(s):  
P. Kędziora ◽  
J. Jadżyn ◽  
L. Hellemans
Keyword(s):  
Electric Field ◽  
Dielectric Relaxation ◽  
Frequency Dependence ◽  
High Strength ◽  
Static Electric Field ◽  
Nonpolar Medium ◽  
Nonlinear Dielectric ◽  
Dielectric Increment ◽  
Low Strength

The frequency dependence of the nonlinear dielectric increment was studied for benzene solutions of the nematogenic molecule 4-(trans-4'-n-hexylcyclohexyl)isothiocyanatobenzene (C6H13CyHx-Ph-N = C = S, 6CHBT) at 25°C. The increment was induced by a quasi-static electric field of high strength (107 V/m), and its relaxation was detected by an alternating field of low strength (102 V/m) in the fre-quency range 1 MHz-3 GHz. The results are discussed in the framework of Coffey's theory.

scholarly journals Mechanically controllable nonlinear dielectrics

2020 ◽  
Vol 6 (10) ◽  
pp. eaaz3180 ◽  
Author(s):  
D. L. Ko ◽  
M. F. Tsai ◽  
J. W. Chen ◽  
P. W. Shao ◽  
Y. Z. Tan ◽  
...  
Keyword(s):  
Phase Transition ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Quality ◽  
Detailed Mechanism ◽  
Nonlinear Dielectric ◽  
Channel Current ◽  
Theoretical Support ◽  
Effect Transistor

Strain-sensitive BaxSr1−xTiO3 perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba0.5Sr0.5TiO3 (BSTO) and ferroelectric BaTiO3 (BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy.

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