scholarly journals Mechanically controllable nonlinear dielectrics

2020 ◽  
Vol 6 (10) ◽  
pp. eaaz3180 ◽  
Author(s):  
D. L. Ko ◽  
M. F. Tsai ◽  
J. W. Chen ◽  
P. W. Shao ◽  
Y. Z. Tan ◽  
...  
Keyword(s):  
Phase Transition ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Quality ◽  
Detailed Mechanism ◽  
Nonlinear Dielectric ◽  
Channel Current ◽  
Theoretical Support ◽  
Effect Transistor

Strain-sensitive BaxSr1−xTiO3 perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba0.5Sr0.5TiO3 (BSTO) and ferroelectric BaTiO3 (BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy.

On the methodology of the determination of charge concentration dependent mobility from organic field-effect transistor characteristics

2018 ◽  
Vol 20 (4) ◽  
pp. 2308-2319 ◽  
Author(s):  
Miroslav Menšík ◽  
Petr Toman ◽  
Urszula Bielecka ◽  
Wojciech Bartkowiak ◽  
Jiří Pfleger ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Semiconducting Polymers ◽  
Organic Field Effect Transistor ◽  
Energy Disorder ◽  
Charge Concentration ◽  
Effect Transistor

We developed a new methodology for determining charge concentration dependent mobility from organic field-effect transistor characteristics, applicable for semiconducting polymers with structural and energy disorder.

scholarly journals High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

2011 ◽  
Vol 120 (6A) ◽  
pp. A-22-A-24 ◽  
Author(s):  
A. Taube ◽  
R. Kruszka ◽  
M. Borysiewicz ◽  
S. Gierałtowska ◽  
E. Kamińska ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
High Quality ◽  
Enhancement Mode ◽  
Mode Field ◽  
Effect Transistor

Division by current: a new approach to FET capacitance modeling

2011 ◽  
Vol 3 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Stephen Maas
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Circuit Simulation ◽  
New Approach ◽  
Charge Conservation ◽  
Capacitance Measurements ◽  
Current Formulation ◽  
Effect Transistor

This paper introduces a new approach to the modeling of capacitance in field-effect transistor (FET) devices, which we call division by current. It is compared with existing formulations, which we call division by capacitance and division by charge. In doing so, it is necessary to normalize the theory of nonlinear capacitances and to clarify a number of matters. These include charge conservation and determination of charge functions from capacitance measurements, which are often misstated in the literature. We find the division by current formulation to be practical and to have significant advantages in the generation of FET models and in circuit simulation.

scholarly journals Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

2014 ◽  
Vol 105 (21) ◽  
pp. 213501 ◽  
Author(s):  
Wei Li ◽  
Qin Zhang ◽  
R. Bijesh ◽  
Oleg A. Kirillov ◽  
Yiran Liang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Band Offset ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

scholarly journals Dynamic electrical behaviour of a thermoresponsive polymer in well-defined poly(N-isopropylacrylamide)-grafted semiconductor devices

RSC Advances ◽  
2017 ◽  
Vol 7 (55) ◽  
pp. 34517-34521 ◽  
Author(s):  
Tsukuru Masuda ◽  
Taira Kajisa ◽  
Aya Mizutani Akimoto ◽  
Akane Fujita ◽  
Kenichi Nagase ◽  
...  
Keyword(s):  
Phase Transition ◽  
Real Time ◽  
Temperature Change ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Behaviour ◽  
Thermoresponsive Polymer ◽  
Effect Transistor ◽  
Response To Temperature ◽  
Transition Behaviour

Herein, we found that the phase transition behaviour from swelling state to deswelling state in response to temperature change was electrically detected in real time by using the poly(N-isopropylacrylamide)-grafted gate field effect transistor.

scholarly journals Biosensor Based on a Nanowire Field-effect Transistor for the Determination of Prostate Specific Antigen

2017 ◽  
Vol 27 ◽  
pp. 234-235 ◽  
Author(s):  
Maya Rubtsova ◽  
Galina Presnova ◽  
Denis Presnov ◽  
Vladimir Krupenin ◽  
Vitaly Grigorenko ◽  
...  
Keyword(s):  
Prostate Specific Antigen ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Specific Antigen ◽  
Effect Transistor
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