Layer thickness effect on the magnetoresistance of a current-perpendicular-to-plane spin valve

2006 ◽  
Vol 100 (6) ◽  
pp. 063703 ◽  
Author(s):  
S. G. Tan ◽  
M. B. A. Jalil ◽  
S. Bala Kumar ◽  
G. C. Han ◽  
Y. K. Zheng
Keyword(s):  
Layer Thickness ◽  
Spin Valve ◽  
Thickness Effect ◽  
Current Perpendicular To Plane ◽  
A Current

Giant magnetroresistance properties of specular spin valve films in a current perpendicular to plane structure

2001 ◽  
Vol 89 (11) ◽  
pp. 6943-6945 ◽  
Author(s):  
K. Nagasaka ◽  
Y. Seyama ◽  
L. Varga ◽  
Y. Shimizu ◽  
A. Tanaka
Keyword(s):  
Spin Valve ◽  
Current Perpendicular To Plane ◽  
A Current

Interfacial resistance and spin flip effects on the magnetoresistance of a current perpendicular to plane spin valve

2008 ◽  
Vol 103 (7) ◽  
pp. 07F308 ◽  
Author(s):  
N. L. Chung ◽  
Mansoor B. A. Jalil ◽  
S. G. Tan ◽  
S. Bala Kumar
Keyword(s):  
Spin Valve ◽  
Interfacial Resistance ◽  
Spin Flip ◽  
Current Perpendicular To Plane ◽  
A Current

Low resistance spin-valve-type current-perpendicular-to-plane giant magnetoresistance with Co75Fe25

2005 ◽  
Vol 97 (10) ◽  
pp. 10C507 ◽  
Author(s):  
Ken-ichi Aoshima ◽  
Nobuhiko Funabashi ◽  
Kenji Machida ◽  
Yasuyoshi Miyamoto ◽  
Kiyoshi Kuga
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Low Resistance ◽  
Current Perpendicular To Plane

Active layer thickness effect on the recombination process of PCDTBT:PC71BM organic solar cells

2013 ◽  
Vol 14 (1) ◽  
pp. 74-79 ◽  
Author(s):  
Gon Namkoong ◽  
Jaemin Kong ◽  
Matthew Samson ◽  
In-Wook Hwang ◽  
Kwanghee Lee
Keyword(s):  
Solar Cells ◽  
Layer Thickness ◽  
Active Layer ◽  
Organic Solar Cells ◽  
Recombination Process ◽  
Thickness Effect ◽  
Active Layer Thickness

Narrow Track Current-Perpendicular-To-Plane Spin Valve GMR Heads

2004 ◽  
Vol 40 (1) ◽  
pp. 207-212 ◽  
Author(s):  
M. Saito ◽  
N. Hasegawa ◽  
Y. Ide ◽  
Y. Nishiyama ◽  
Y. Hayakawa ◽  
...  
Keyword(s):  
Spin Valve ◽  
Current Perpendicular To Plane

Improved Thermal Stability of Gmr Spin Valve Films

1995 ◽  
Vol 384 ◽  
Author(s):  
R. D. Mcmichael ◽  
W. F. Egelhoff ◽  
Minh Ha
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Annealing Time ◽  
General Structure ◽  
Spin Valve ◽  
Square Root ◽  
Magnetic Multilayer ◽  
Valve Structure ◽  
Thermal Stability Of

ABSTRACTIn order to improve the thermal stability of magnetic multilayer “spin valve” structures, we have measured the magnetic and magnetoresistive properties of a number of samples with the general structure of NiO/Co/Cu/Co/Cu/Co/NiO as a function of annealing time at 250 °C. The magnetoresistance (MR) of the samples annealed in air decreases proportionally to the square root of the annealing time. For samples annealed in a vacuum, the decrease in magnetoresistance is reduced, but not eliminated. Magnetometry of a vacuum annealed NiO/Co/NiO sample shows a magnetization reduction and a coercivity increase which suggest oxidation of the NiO-biased “outer” Co layers of the spin valve structure. For increasing NiObiased Co layer thickness, we show enhanced thermal stability and even increasing MR with annealing time for samples with the thickest outer Co layers.

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