scholarly journals Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs

2006 ◽  
Vol 89 (7) ◽  
pp. 071103 ◽  
Author(s):  
M. Mikulics ◽  
E. A. Michael ◽  
M. Marso ◽  
M. Lepsa ◽  
A. van der Hart ◽  
...  
Keyword(s):  
Traveling Wave ◽  
High Energy ◽  
Nitrogen Ion ◽  
Ion Implanted

Terahertz continuous-wave large-area traveling-wave photomixers on high-energy low-dose ion-implanted GaAs

2007 ◽  
Vol 90 (17) ◽  
pp. 171109 ◽  
Author(s):  
E. A. Michael ◽  
I. Cámara Mayorga ◽  
R. Güsten ◽  
A. Dewald ◽  
R. Schieder
Keyword(s):  
Traveling Wave ◽  
Low Dose ◽  
Continuous Wave ◽  
High Energy ◽  
Large Area ◽  
Ion Implanted

Identification of vacancy type defects in low and high energy nitrogen ion implanted InP

2005 ◽  
Vol 38 (24) ◽  
pp. 4329-4334 ◽  
Author(s):  
K Santhakumar ◽  
G Venugopal Rao ◽  
G Amarendra ◽  
S Abhaya ◽  
V Sankara Sastry ◽  
...  
Keyword(s):  
High Energy ◽  
Nitrogen Ion ◽  
Ion Implanted

Terahertz photomixing in high energy oxygen- and nitrogen-ion-implanted GaAs

2007 ◽  
Vol 91 (3) ◽  
pp. 031107 ◽  
Author(s):  
I. Cámara Mayorga ◽  
E. A. Michael ◽  
A. Schmitz ◽  
P. van der Wal ◽  
R. Güsten ◽  
...  
Keyword(s):  
High Energy ◽  
Nitrogen Ion ◽  
Ion Implanted

Luminescence Centers in High-Energy Ion-Implanted Silicon

1997 ◽  
Vol 258-263 ◽  
pp. 587-592 ◽  
Author(s):  
Koichi Terashima ◽  
Taeko Ikarashi ◽  
Masahito Watanabe ◽  
Tomohisa Kitano
Keyword(s):  
High Energy ◽  
Luminescence Centers ◽  
Ion Implanted

Characteristics of surface nano-structural modifications in nitrogen ion implanted W as a function of temperature

2006 ◽  
Vol 252 (15) ◽  
pp. 5419-5423 ◽  
Author(s):  
H. Savaloni ◽  
F. Modiri ◽  
H. Hajihosseini ◽  
A. Shokouhy
Keyword(s):  
Structural Modifications ◽  
Nitrogen Ion ◽  
Ion Implanted

Ultrafast carrier trapping in high energy ion implanted gallium arsenide

1996 ◽  
Vol 68 (16) ◽  
pp. 2225-2227 ◽  
Author(s):  
C. Jagadish ◽  
H. H. Tan ◽  
A. Krotkus ◽  
S. Marcinkevicius ◽  
K. P. Korona ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
High Energy ◽  
Carrier Trapping ◽  
Ultrafast Carrier ◽  
Ion Implanted

Quantitative Ruthenium Method for Analysis of Nitrogen Ion-Implanted Titanium Alloy (Ti-6AI-4V) and the Effect on Bacterial Adherence

1991 ◽  
Vol 252 ◽  
Author(s):  
Beverly L. Giammara ◽  
James M. Williams ◽  
David J. Birch ◽  
Joanne J. Dobbins
Keyword(s):  
Pseudomonas Aeruginosa ◽  
Titanium Alloy ◽  
Ion Implantation ◽  
Growth Period ◽  
Scattered Electron ◽  
Nitrogen Ion Implantation ◽  
Total Fluence ◽  
Nitrogen Ion ◽  
Electron Imaging ◽  
Ion Implanted

ABSTRACTThe effects of nitrogen ion implantation of Ti-6AI-4V alloy on growth of Pseudomonas aeruginosa bacteria on surfaces of the alloy have been investigated. Results for ion implanted samples were compared with controls with similarly smoothly polished surfaces and with controls that had intentionally roughened surfaces. The test consisted of exposing sterile alloy samples to a microbiological broth, to which 24 hour-old cultures of Pseudomonas aeruginosa had been added. After bioassociation at normal temperature 37°C, bacteria adhering to the surface were fixed and treated with a new ruthenium tetroxide staining method, and quantified by use of scanning electron microscopy (SEM), back-scattered electron imaging and EDAX energy dispersive microanalysis. For smooth samples of the alloy, after a 12 hour growth period, the retained bacteria (revealed by the biologically incorporated ruthenium), decreased monotonically with nitrogen dose out to a total fluence of approximately 7 × 1017/cm2 in an affected depth of approximately 0.1500 μm. The SEM confirmed that the Pseudomonas aeruginosa adhered equally to control materials. The ruthenium studies revealed that the amount of bacterial adhesion is indirectly proportional to the nitrogen ion implantation of the titanium. The greater the percentage of nitrogen ion implantation in the titanium alloy, the less bacteria colonized the disk.

Investigation of defects in high-energy heavy ion implanted GaAs

2000 ◽  
Vol 52 (1) ◽  
pp. 39-45 ◽  
Author(s):  
Z.Q. Chen ◽  
Z. Wang ◽  
S.J. Wang ◽  
M.D. Hou
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Ion Implanted

Ultra-Microhardness Tests on Ion Implanted Metal Surfaces

1981 ◽  
Vol 7 ◽  
Author(s):  
J.B. Pethica ◽  
W.C. Oliver
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Metal Surfaces ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
High Doses ◽  
Penetration Depths ◽  
Ion Implanted

ABSTRACTTo measure the mechanical properties of ion implanted layers special microhardness tests with penetration depths less than 100 nm have been made. The results show that increases in hardness of up to 50 % may occur in a number of metals as a result of nitrogen ion implantation. Considerable carbon is also present in the implanted surfaces and when in the form of a distinct layer, may give an apparent softening of surfaces at high doses.

scholarly journals Titanium Nitride and Nitrogen Ion Implanted Coated Dental Materials

Coatings ◽  
2012 ◽  
Vol 2 (3) ◽  
pp. 160-178 ◽  
Author(s):  
Youssef S. Al Jabbari ◽  
Jennifer Fehrman ◽  
Ashley C. Barnes ◽  
Angela M. Zapf ◽  
Spiros Zinelis ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Dental Materials ◽  
Nitrogen Ion ◽  
Ion Implanted
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