Carrier storage time of milliseconds at room temperature in self-organized quantum dots

2006 ◽  
Vol 89 (7) ◽  
pp. 072103 ◽  
Author(s):  
A. Marent ◽  
M. Geller ◽  
D. Bimberg ◽  
A. P. Vasi’ev ◽  
E. S. Semenova ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Storage Time ◽  
Self Organized

scholarly journals Materials for Future Quantum Dot-Based Memories

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
T. Nowozin ◽  
D. Bimberg ◽  
K. Daqrouq ◽  
M. N. Ajour ◽  
M. Awedh
Keyword(s):  
Cross Sections ◽  
Room Temperature ◽  
Storage Time ◽  
Thermal Emission ◽  
Current Status ◽  
Strong Electron ◽  
Self Organized ◽  
Hole Confinement ◽  
Storage Times ◽  
Capture Cross Sections

The present paper investigates the current status of the storage times in self-organized QDs, surveying a variety of heterostructures advantageous for strong electron and/or hole confinement. Experimental data for the electronic properties, such as localization energies and capture cross-sections, are listed. Based on the theory of thermal emission of carriers from QDs, we extrapolate the values for materials that would increase the storage time at room temperature to more than millions of years. For electron storage, GaSb/AlSb, GaN/AlN, and InAs/AlSb are proposed. For hole storage, GaSb/Al0.9Ga0.1As, GaSb/GaP, and GaSb/AlP are promising candidates.

Optical Properties of Self-Organized InGaAs/GaAs Quantum Dots in Field-Effect Structures

1998 ◽  
Vol 536 ◽  
Author(s):  
A. Babinski ◽  
T. Tomaszewicz ◽  
A. Wysmolek ◽  
J. M. Baranowski ◽  
C. Lobo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Low Temperature ◽  
Electric Field ◽  
Field Effect ◽  
Room Temperature ◽  
Applied Bias ◽  
Electric Field Dependence ◽  
Self Organized ◽  
Peak Energy

AbstractThe results of photoluminescence (PL) and electroreflectance (ER) measurements on InGaAs/GaAs self-organized quantum dots (QDs) in field-effect structure are presented. It has been found that the QDs PL can be completely quenched in reversely biased structure both at room temperature and at T=4.2K. A non-monotonic dependence of QDs PL peak energy with applied bias is observed at low temperature, which is attributed to the band-gap re-normalization due to QDs charging and size distribution effects. The electric field dependence of the QDs ER feature at room temperature has been analysed. A red shift of that feature with increasing electric field has been observed.

scholarly journals 230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier

2015 ◽  
Vol 106 (4) ◽  
pp. 042102 ◽  
Author(s):  
Leo Bonato ◽  
Elisa M. Sala ◽  
Gernot Stracke ◽  
Tobias Nowozin ◽  
André Strittmatter ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Storage Time ◽  
Room Temperature Storage ◽  
Localization Energy ◽  
Hole Localization ◽  
Temperature Storage

DRAM storage time of milliseconds demonstrated in self-organized quantum dots

2007 ◽  
Author(s):  
A. Marent ◽  
M. Geller ◽  
A. P. Vasi’ev ◽  
E. S. Semenova ◽  
A. E. Zhukov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Storage Time ◽  
Self Organized

Cr-Doped InAs Self-Organized Diluted Magnetic Quantum Dots with Room-Temperature Ferromagnetism

2007 ◽  
Vol 24 (7) ◽  
pp. 2118-2121 ◽  
Author(s):  
Zheng Yu-Hong ◽  
Zhao Jian-Hua ◽  
Bi Jing-Feng ◽  
Wang Wei-Zhu ◽  
Ji Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Self Organized ◽  
Diluted Magnetic ◽  
Magnetic Quantum Dots

Femtosecond dynamics and absorbance of self-organized InAs quantum dots emitting near 1.3 μm at room temperature

2000 ◽  
Vol 77 (14) ◽  
pp. 2201-2203 ◽  
Author(s):  
D. Birkedal ◽  
J. Bloch ◽  
J. Shah ◽  
L. N. Pfeiffer ◽  
K. West
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Inas Quantum Dots ◽  
Femtosecond Dynamics ◽  
Self Organized

QUANTUM DOT SEMICONDUCTOR LASERS

1998 ◽  
Vol 09 (04) ◽  
pp. 1081-1107
Author(s):  
PALLAB BHATTACHARYA
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Semiconductor Lasers ◽  
High Speed ◽  
Room Temperature ◽  
Growth Parameters ◽  
Light Emitters ◽  
Self Organized ◽  
Speed Performance ◽  
Ridge Waveguide Lasers

The formation of coherently strained islands during the growth of strained heterostructures has been exploited to form an array of quantum dots. The shape and size of the islands vary with growth parameters, but exhibit the electronic properties of zero-dimensional systems. One or multiple, vertically coupled, layers of such quantum dots can form the gain region of a separately confined heterostructure (SCH) laser. The properties of such InGaAs/GaAs self-organized quantum dot lasers are described here. The lasers exhibit temperature independent operation up to 100 K and beyond. Typical threshold currents of 200 μm long room temperature lasers vary from 6 to 20 mA. The small-signal modulation bandwidths of ridge waveguide lasers are 5–7.5 GHz at 300 K and increased to >20 GHz at 80 K. We believe that electron-hole scattering intrinsically limits the high-speed performance of these devices, in spite of differential gains as high as ~ 7× 10-14 cm2 at room temperature. Wavelength switching is demonstrated in these devices and preliminary results on long-wavelengths intersubband quantum dot light emitters are also presented.

Growth of GaAs/AlGaAs Quantum Dots Using Self-Organized InP Stressors

1995 ◽  
Vol 417 ◽  
Author(s):  
M. C. Hanna ◽  
Z. H. Lu ◽  
A. F. Cahill ◽  
M. J. Heben ◽  
A. J. Nozik
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Near Surface ◽  
Self Organized ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractGaAs quantum dots were formed in a near surface quantum well (QW) by producing lateral confinement with self-organized InP stressors grown in situ by metal organic chemical vapor deposition (MOCVD). We report here the influence of growth conditions on InP island formation on AlGaAs/GaAs single QW structures and also the influence of the QW structure on the optical properties of the GaAs quantum dots. We observe strong photoluminscence up to room temperature from the strain-induced quantum dots with energy redshifts of 70 meV below the QW peak.

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