Optical Properties of Self-Organized InGaAs/GaAs Quantum Dots in Field-Effect Structures
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AbstractThe results of photoluminescence (PL) and electroreflectance (ER) measurements on InGaAs/GaAs self-organized quantum dots (QDs) in field-effect structure are presented. It has been found that the QDs PL can be completely quenched in reversely biased structure both at room temperature and at T=4.2K. A non-monotonic dependence of QDs PL peak energy with applied bias is observed at low temperature, which is attributed to the band-gap re-normalization due to QDs charging and size distribution effects. The electric field dependence of the QDs ER feature at room temperature has been analysed. A red shift of that feature with increasing electric field has been observed.
2015 ◽
Vol 29
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pp. 1550211
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2007 ◽
Vol 316
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pp. e52-e55
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1988 ◽
pp. 325-359
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2019 ◽
Vol 476
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pp. 757-760
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2019 ◽
Vol 13
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pp. 795-802
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2014 ◽
Vol 75
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pp. 505-513
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