GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy

2006 ◽  
Vol 89 (5) ◽  
pp. 053106 ◽  
Author(s):  
Soo-Ghang Ihn ◽  
Jong-In Song ◽  
Young-Hun Kim ◽  
Jeong Yong Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gaas Nanowires

Molecular Beam Epitaxy of GaAs Nanowires on Si Substrates

2006 ◽  
Author(s):  
Soo-Ghang Ihn ◽  
Jong-In Song ◽  
Young-Hun Kim ◽  
Jeong Yong Lee ◽  
Soo-Ghang Ihn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gaas Nanowires

Molecular Beam Epitaxy of GaAs Nanowires on Si Substrates

2006 ◽  
Author(s):  
Soo-Ghang Ihn ◽  
Jong-In Song ◽  
Young-Hun Kim ◽  
Jeong Yong Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gaas Nanowires

Growth of GaAs Nanowires on Si Substrates Using a Molecular Beam Epitaxy

2007 ◽  
Vol 6 (3) ◽  
pp. 384-389 ◽  
Author(s):  
Soo-Ghang Ihn ◽  
Jong-In Song ◽  
Young-Hun Kim ◽  
Jeong Yong Lee ◽  
Il-Ho Ahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gaas Nanowires

Effect of SiO2 Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy

2015 ◽  
Vol 1131 ◽  
pp. 16-19
Author(s):  
Patchareewan Prongjit ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Chiraporn Tongyam ◽  
Piyasan Prasertthdam ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Scanning Electron Microscope ◽  
Structural Properties ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Gaas Nanowires ◽  
Scanning Electron

The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).

Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)

1999 ◽  
Vol 595 ◽  
Author(s):  
U. Hömmerich ◽  
J. T. Seo ◽  
J. D. MacKenzie ◽  
C. R. Abernathy ◽  
R. Birkhahn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Excited States ◽  
Room Temperature ◽  
Molecular Beam ◽  
Average Lifetime ◽  
Green Luminescence ◽  
Si Substrates ◽  
Lifetime Analysis ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Er Doped

AbstractWe report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 µm PL resulting from the intra-4f Er3+ transition 4I13/2→4I15/2. Under below-gap excitation the samples exhibited very similar 1.54 µm PL intensities. On the contrary, under above-gap excitation GaN: Er (SSMBE) showed ∼80 times more intense 1.54 µm PL than GaN: Er (MOMBE). In addition, GaN: Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN: Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 µs at 15 K and 5.5 µs at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the 2H11/2 and 4S3/2 excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

scholarly journals Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

2018 ◽  
Vol 30 (6) ◽  
pp. 065602 ◽  
Author(s):  
Suzanne Lancaster ◽  
Heiko Groiss ◽  
Tobias Zederbauer ◽  
Aaron M Andrews ◽  
Donald MacFarland ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires ◽  
Axial Growth

Growth and characterization of GaAs layers on Si substrates by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (24) ◽  
pp. 2435-2437 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
John K. Liu ◽  
Gouri Radhakrishnan ◽  
Joseph Katz ◽  
Shiro Sakai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates
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