Low resistance nonalloyed Ni∕Au Ohmic contacts to p-GaN irradiated by KrF excimer laser

2006 ◽  
Vol 89 (4) ◽  
pp. 042107 ◽  
Author(s):  
Min-Suk Oh ◽  
Dae-Kue Hwang ◽  
Jae-Hong Lim ◽  
Chang-Goo Kang ◽  
Seong-Ju Park
Keyword(s):  
Excimer Laser ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
Krf Excimer Laser

Formation of Low Resistance Nonalloyed Ti∕Au Ohmic Contacts to n-Type ZnO by KrF Excimer Laser Irradiation

2005 ◽  
Vol 8 (11) ◽  
pp. G317 ◽  
Author(s):  
Min-Suk Oh ◽  
Sang-Ho Kim ◽  
Dae-Kue Hwang ◽  
Seong-Ju Park ◽  
Tae-Yeon Seong
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

I-V Characteristics and Interface Properties of Al-Si(P) Contacts by the Krf Excimer Laser Induced Recrystallization

1992 ◽  
Vol 283 ◽  
Author(s):  
K. Sohn ◽  
H. Lee ◽  
D. A. Hensley
Keyword(s):  
Excimer Laser ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Interface Properties ◽  
Auger Analysis ◽  
Effective Barrier ◽  
Thermionic Field Emission ◽  
Krf Excimer Laser ◽  
The One ◽  
P Type

ABSTRACTAl was deposited on the both sides of p-type Si by the sputtering, and the pulsed KrF excimer laser was irradiated on the one side and both sides of Al dot contacts. Due to the thin-high doping recrystallized layer, the transitions from the Schottky diodes to the ohmic contacts via backward diodes were observed in I-V measurement. Good N-shape negative resistances and notches were observed in the diodes, and ohmic contacts. Possible interpretations of the orgin of these phenomena are discussed. And, the simple model of the effective barrier height reduction under the thermionic field emission was developed using WKB approximation, and tunneling theory. By the depth Auger analysis, Al, and Si profiles near Al-Si interface after the laser irradiation were observed.

Pressure-Controlled Wavelength Stabilization of a KrF Excimer Laser with Narrowed Bandwidth

1989 ◽  
Vol 28 (Part 1, No. 11) ◽  
pp. 2354-2356
Author(s):  
Yasuhiro Shimada ◽  
Koichi Wani ◽  
Yoshiro Ogata
Keyword(s):  
Excimer Laser ◽  
Wavelength Stabilization ◽  
Krf Excimer Laser ◽  
Pressure Controlled

Preparation of boron carbide thin film by pulsed KrF excimer laser deposition process

2002 ◽  
Vol 407 (1-2) ◽  
pp. 126-131 ◽  
Author(s):  
Shin-ichi Aoqui ◽  
Hisatomo Miyata ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara
Keyword(s):  
Thin Film ◽  
Boron Carbide ◽  
Excimer Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Krf Excimer Laser

An Advanced KrF Excimer Laser Stepper For Production Of 16MDRAMs

1988 ◽  
Author(s):  
Hideo Nakagawa ◽  
Masaru Sasago ◽  
Masayuki Endo ◽  
Yushihiko Hirai ◽  
Kazufumi Ogawa ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Krf Excimer Laser

Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes

2012 ◽  
Vol 12 (1) ◽  
pp. 225-227 ◽  
Author(s):  
Joon-Woo Jeon ◽  
Sang Youl Lee ◽  
June O. Song ◽  
Tae-Yeon Seong
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Pt/Ti Low Resistance Non-Alloyed Ohmic Contacts To InP-Based Photonic Devices

1989 ◽  
Author(s):  
A. Katz ◽  
S. N. G. Chu ◽  
P. M. Thomas ◽  
W. C. Dautremont-Smith
Keyword(s):  
Ohmic Contacts ◽  
Photonic Devices ◽  
Low Resistance

Single pulse vibrational Raman scattering by a broadband KrF excimer laser in a hydrogen–air flame

1990 ◽  
Vol 29 (15) ◽  
pp. 2325 ◽  
Author(s):  
Robert W. Pitz ◽  
Joseph A. Wehrmeyer ◽  
J. M. Bowling ◽  
Tsarng-Sheng Cheng
Keyword(s):  
Raman Scattering ◽  
Excimer Laser ◽  
Single Pulse ◽  
Krf Excimer Laser

Very low resistance non-alloyed ohmic contacts using as-rich GaAs

2005 ◽  
Author(s):  
M.P. Patkar ◽  
T.P. Chin ◽  
J.M. Woodall ◽  
M.S. Lundstrom ◽  
M.R. Melloch
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance
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