scholarly journals Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN

2006 ◽  
Vol 89 (7) ◽  
pp. 073503 ◽  
Author(s):  
Serkan Butun ◽  
Mutlu Gökkavas ◽  
HongBo Yu ◽  
Ekmel Ozbay
Keyword(s):  
Dark Current ◽  
Metal Semiconductor Metal

scholarly journals Suppression of dark current in GeO_x-passivated germanium metal-semiconductor-metal photodetector by plasma post-oxidation

2015 ◽  
Vol 23 (13) ◽  
pp. 16967 ◽  
Author(s):  
Jian Kang ◽  
Rui Zhang ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Dark Current ◽  
Metal Semiconductor Metal

Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors

2018 ◽  
Vol 498 ◽  
pp. 35-42 ◽  
Author(s):  
Shashwat Rathkanthiwar ◽  
Anisha Kalra ◽  
Rangarajan Muralidharan ◽  
Digbijoy N. Nath ◽  
Srinivasan Raghavan
Keyword(s):  
Screw Dislocation ◽  
Dark Current ◽  
Metal Semiconductor Metal ◽  
Solar Blind

Surface Passivation and the Ultrafast Optical Response of Low-Temperature-Grown GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
H. H. Wang ◽  
J. F. Whitaker ◽  
K. Al-Hemyari ◽  
S. L. Williamson
Keyword(s):  
Low Temperature ◽  
Dark Current ◽  
Surface Passivation ◽  
Surface States ◽  
Time Response ◽  
Temporal Response ◽  
Dc Voltage ◽  
Ultrafast Optical ◽  
Metal Semiconductor Metal ◽  
Low Temperature Grown Gaas

AbstractMetal-semiconductor-metal photodetectors fabricated using low-temperature-grown GaAs have been passivated using AlGaAs cap layers in order to understand the influence of surface states and fields on the properties of these detectors. It has been found that passivation has little effect on the time response or persistent photoconductive tails associated with the detectors, but that responsivity and dark current can be enhanced in certain circumstances. The dependence of the temporal response on optical fluence and dc-voltage bias were observed for both passivated and unpassivated detectors.

Mapping of Defects in Metal-Semiconductor-Metal (MSM) Detectors in Hg1−xCdxTe by Nuclear Microprobe

1993 ◽  
Vol 302 ◽  
Author(s):  
Patrick W. Leech ◽  
Sean P. Dooley ◽  
David N. Jamieson
Keyword(s):  
Active Region ◽  
Dark Current ◽  
Linear Growth ◽  
Cdte Layer ◽  
Nuclear Microprobe ◽  
High Quality ◽  
Growth Defects ◽  
Metal Semiconductor Metal ◽  
Contrast Microscopy ◽  
Equivalent Conditions

ABSTRACTThe incidence of compositional and structural inhomogenieties in MSM detectors based on Hg1−xCdxTe/GaAs and Hg1−xCdxTe/GaAs/Si has been examined by nuclear microprobe. With a 2 MeV He+ beam focussed to ≥5 μm, the microprobe has demonstrated the capability for RBS channelling in the active region of a Hg1−xCdxTe device and the imaging of defects by Channelling Contrast Microscopy (CCM). A series of linear growth defects in some Hg1−xCdxTe devices were identified using CCM. The channelling RBS spectra from these regions have shown an increase in χmin compared with the surrounding high quality crystal. The occurence of these defects was associated with a degradation in the performance of affected devices in an array. RBS spectra have also revealed the presence of an anomalous CdTe layer, correlating with a significant reduction in dark current and increase in breakdown voltage of these devices. RBS channelling of individual devices has identified differences in χmin between arrays which were prepared under equivalent conditions of growth and processing.

AlInAs/GaInAs metal-semiconductor-metal photodiodes with very low dark current

1991 ◽  
Vol 15 (1-4) ◽  
pp. 267-270 ◽  
Author(s):  
A Temmar ◽  
J.P. Praseuth ◽  
J.F. Palmier ◽  
A. Scavennec
Keyword(s):  
Dark Current ◽  
Metal Semiconductor Metal

Dark current characteristics of GaAs metal-semiconductor-metal (MSM) photodetectors

1990 ◽  
Vol 37 (7) ◽  
pp. 1623-1629 ◽  
Author(s):  
W.C. Koscielniak ◽  
J.-L. Pelouard ◽  
R.M. Kolbas ◽  
M.A. Littlejohn
Keyword(s):  
Dark Current ◽  
Metal Semiconductor Metal ◽  
Current Characteristics ◽  
Msm Photodetectors

Band-Edge Photoresponse Characteristics of Diamond Msm's

1993 ◽  
Vol 302 ◽  
Author(s):  
Mike Marchywka ◽  
Steven C. Binari ◽  
Deborah A. Koolbeck ◽  
Daniel Moses
Keyword(s):  
Steady State ◽  
Transient Response ◽  
Dark Current ◽  
Vacuum Ultraviolet ◽  
Light Signal ◽  
Band Edge ◽  
Metal Semiconductor Metal ◽  
Response Versus ◽  
Substrate Properties

ABSTRACTBand-edge photoresponse measurements on simple diamond metal-semiconductor-metal (MSM) devices can give information about the quality of the diamond material and its utility as a detector. We have fabricated several such devices on a variety of substrates and measured their response between 700 and 120nm with special emphasis around the band edge near 220nm. Steady state and transient response have been measured as a function of bias conditions. Transient response in this case refers to initial overshoot, undershoot, and increased dark current in response to a chopped vacuum ultraviolet (VUV) light signal for times on the order of seconds. We compare steady state quantum efficiency results to a simple model, discuss the characteristics of response versus applied voltage, and examine relationships between response and substrate properties.

Defect Reduction in Si-based Metal-Semiconductor-Metal Photodetectors with Cryogenic Processed Schottky Contacts

2005 ◽  
Vol 864 ◽  
Author(s):  
M. Li ◽  
W. A. Anderson
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Dark Current ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Metal Deposition ◽  
Active Area ◽  
Electrode Spacing ◽  
Metal Semiconductor Metal

AbstractMetal-Semiconductor-Metal photodetectors (MSM-PD's) and simple Schottky diodes were fabricated using a low temperature (LT) technique to greatly reduce the device dark current. LT processing for metal deposition increased Schottky barrier height by improving the interface between metal and semiconductor to reduce the leakage current of the device. The structure consists of a 20 Å oxide over the active area to passivate surface states, a thicker oxide under contact pads to reduce dark current and the interdigitated Schottky contacts. A comparison was made for Schottky metal deposited with the substrate at 25 °C or -50 °C (LT). The devices fabricated using the LT process had better I-V characteristics compared to detectors fabricated using the standard room temperature (RT) metal deposition technique. The dark current for the LT film was found to be one to three orders lower in magnitude compared to the film deposited at RT. In one case, for example, the dark current was significantly reduced from 1.69 nA to 4.58 pA at 1.0 V. The active area for the device was determined to be 36 × 50 μm2 with 4 μm electrode width and 4 μm electrode spacing. Additionally, LT-MSM-PD's exhibited an excellent linear relationship between the photo-current and the incident light power. The Schottky barrier height for LT processing was found to be 0.79 eV; however, this value was 0.1 eV more than that of the same contact obtained by RT processing.

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