scholarly journals Single-crystal silicon nanoparticles: An instability to check their synthesis

2006 ◽  
Vol 89 (1) ◽  
pp. 013107 ◽  
Author(s):  
M. Cavarroc ◽  
M. Mikikian ◽  
G. Perrier ◽  
L. Boufendi
Keyword(s):  
Single Crystal ◽  
Silicon Nanoparticles ◽  
Single Crystal Silicon ◽  
Crystal Silicon

scholarly journals Investigation of Photoelectron Properties of Polymer Films with Silicon Nanoparticles

Surfaces ◽  
2019 ◽  
Vol 2 (2) ◽  
pp. 387-394 ◽  
Author(s):  
Elizaveta A. Konstantinova ◽  
Alexander S. Vorontsov ◽  
Pavel A. Forsh
Keyword(s):  
Single Crystal ◽  
Silicon Nanoparticles ◽  
Electrochemical Etching ◽  
Nonequilibrium Charge Carrier ◽  
Electric Energy ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Paramagnetic Resonance ◽  
Carrier Separation ◽  
Electron Paramagnetic

Hybrid samples consisting of polymer poly-3(hexylthiophene) (P3HT) and silicon nanoparticles were prepared. It was found that the obtained samples were polymer matrixes with conglomerates of silicon nanoparticles of different sizes (10–104 nm). It was found that, under illumination, the process of nonequilibrium charge carrier separation between the silicon nanoparticles and P3HT with subsequent localization of the hole in the polymer can be successfully detected using electron paramagnetic resonance (EPR) spectroscopy. It was established that the main type of paramagnetic centers in P3HT/silicon nanoparticles are positive polarons in P3HT. For comparison, samples consisting only of polymer and silicon nanoparticles were also investigated by the EPR technique. The polarons in the P3HT and Pb centers in the silicon nanoparticles were observed. The possibility of the conversion of solar energy into electric energy is shown using structures consisting of P3HT polymer and silicon nanoparticles prepared by different methods, including the electrochemical etching of a silicon single crystal in hydrofluoric acid solution and the laser ablation of single-crystal silicon in organic solvents. The results can be useful for solar cell development.

Synthesis of highly oriented, single-crystal silicon nanoparticles in a low-pressure, inductively coupled plasma

2003 ◽  
Vol 94 (3) ◽  
pp. 1969-1974 ◽  
Author(s):  
Ameya Bapat ◽  
Christopher R. Perrey ◽  
Steven A. Campbell ◽  
C. Barry Carter ◽  
Uwe Kortshagen
Keyword(s):  
Single Crystal ◽  
Inductively Coupled Plasma ◽  
Silicon Nanoparticles ◽  
Single Crystal Silicon ◽  
Low Pressure ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
Oriented Single Crystal

scholarly journals Plasma synthesis of single-crystal silicon nanoparticles for novel electronic device applications

2004 ◽  
Vol 46 (12B) ◽  
pp. B97-B109 ◽  
Author(s):  
Ameya Bapat ◽  
Curtis Anderson ◽  
Christopher R Perrey ◽  
C Barry Carter ◽  
Stephen A Campbell ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Nanoparticles ◽  
Electronic Device ◽  
Single Crystal Silicon ◽  
Plasma Synthesis ◽  
Crystal Silicon ◽  
Device Applications

Collection of Silicone Nanoparticles in Ingot Growing Process and Analysis of Particle Characteristics

2018 ◽  
Vol 777 ◽  
pp. 145-149 ◽  
Author(s):  
Junghyun Kim ◽  
Jiho Ahn ◽  
Hee Yong Kang ◽  
Gyo Woo Lee
Keyword(s):  
Specific Surface ◽  
Single Crystal ◽  
Surface Area ◽  
Silicon Nanoparticles ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Ingot ◽  
Particle Characteristics ◽  
Potential Applications ◽  
Application Fields

This study was conducted to investigate the characteristics of silicon nanoparticles using waste vapors generated from a single-crystal silicon ingot growth furnace and to study their potential applications. The silicon vapors generated in the silicon ingot growth furnace were collected in the form of nanoparticles, and SEM, EDS, BET and XRD analyzes were performed to analyze the characteristics of the collected particles. The particles were in the form of agglomerated nanoparticles with a specific surface area of ​​176 m2 / g and were amorphous SiOx particles with low crystallinity. In the future, we plan to study the application fields of the collected nanoparticles.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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