Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography

2006 ◽  
Vol 88 (26) ◽  
pp. 263103 ◽  
Author(s):  
Alan J. Kubis ◽  
Thomas E. Vandervelde ◽  
John C. Bean ◽  
Derren N. Dunn ◽  
Robert Hull
Keyword(s):  
Quantum Dots ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ge Quantum Dots ◽  
Focused Ion Beam Tomography

scholarly journals Quantification of Subsurface Damage in a Brittle Insulating Ceramic by Three-Dimensional Focused Ion Beam Tomography

2011 ◽  
Vol 17 (2) ◽  
pp. 240-245 ◽  
Author(s):  
N. Payraudeau ◽  
D. McGrouther ◽  
K.U. O'Kelly
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Subsurface Damage ◽  
Insulating Material ◽  
Acquisition Process ◽  
Automated Method ◽  
Minimal Damage ◽  
Automatic Acquisition ◽  
Focused Ion Beam Tomography

AbstractIn this study, we present a fully automated method to investigate and reconstruct the three-dimensional crack structure beneath an indent in a highly insulating material. This work concentrates on issues arising from a long automatic acquisition process, the insulating nature of the specimen, and the introduction of minimal damage to the original cracks resulting from indentation.

Pattern level assembly of Ge quantum dots on Si with focused ion beam templating

2008 ◽  
Vol 93 (2) ◽  
pp. 023106 ◽  
Author(s):  
M. Gherasimova ◽  
R. Hull ◽  
M. C. Reuter ◽  
F. M. Ross
Keyword(s):  
Quantum Dots ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ge Quantum Dots

Three-dimensional analysis of coalesced bainite using focused ion beam tomography

2008 ◽  
Vol 59 (7) ◽  
pp. 877-882 ◽  
Author(s):  
E. Keehan ◽  
L. Karlsson ◽  
H.K.D.H. Bhadeshia ◽  
Mattias Thuvander
Keyword(s):  
Dimensional Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Focused Ion Beam Tomography

Analysis of the Three-Dimensional Nanoscale Relationship of Ge Quantum Dots in a Si Matrix Using Focused Ion Beam Tomography.

2004 ◽  
Vol 818 ◽  
Author(s):  
Alan J. Kubis ◽  
Thomas E. Vandervelde ◽  
John C. Bean ◽  
Derren N. Dunn ◽  
Robert Hull
Keyword(s):  
Quantum Dots ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Transmission Electron ◽  
Tomographic Technique ◽  
Buried Layers ◽  
Relationship Of

AbstractIt is well documented that buried layers in quantum dot (QD) superlattices influence the position of quantum dots in the subsequently grown layers through strain field interactions (e.g.1,2, 3,4). Using the Focused Ion Beam (FIB) tomographic technique we have reconstructed the 3D relationship of successive layers of coherent Ge QDs separated by epitaxial Si capping layers - a “QD superlattice”.Techniques such as Atomic Force Microscopy (AFM) and Scanning Tunneling Microscopy (STM) can only look at a single surface layer of QDs or, in the case of Transmission Electron Microscopy (TEM), look at a two-dimensional projection of a three-dimensional volume so that 3D relationships need to be inferred. Since the strain interactions are complex, an enhanced fundamental understanding of these self-organization mechanisms can more directly be obtained from full 3D reconstructions of these structures.By capping with Si at 300°C we were able to grow QD superlattices with QDs tens of nanometers in height. This places them within the resolution of the FIB tomographic technique to reconstruct. Using the FIB we performed in-situ serial sectioning of the QD superlattice and then reconstructed the QD superlattice. The reconstruction was then analyzed to investigate the ordering of the QDs.Results from a reconstruction of a superlattice matrix will be presented with analysis of the self-ordering of the QDs. Observations of a novel self-limiting (in height) morphology, the quantum mesa, associated with the capping technique used will also be discussed.

Three-Dimensional Microstructural Characterization Using Focused Ion Beam Tomography

MRS Bulletin ◽  
2007 ◽  
Vol 32 (5) ◽  
pp. 408-416 ◽  
Author(s):  
Michael D. Uchic ◽  
Lorenz Holzer ◽  
Beverley J. Inkson ◽  
Edward L. Principe ◽  
Paul Munroe
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Microstructural Characterization ◽  
Materials Characterization ◽  
Experimental Methodology ◽  
Ion Milling ◽  
Current State ◽  
Recent Developments ◽  
Focused Ion Beam Tomography

AbstractThis article reviews recent developments and applications of focused ion beam (FIB) microscopes for three-dimensional (3D) materials characterization at the microscale through destructive serial sectioning experiments. Precise ion milling—in combination with electron-optic—based imaging and surface analysis methods—can be used to iteratively section through metals, ceramics, polymers, and electronic or biological materials to reveal the true size, shape, and distribution of microstructural features. Importantly, FIB tomographic experiments cover a critical size-scale gap that cannot be obtained with other instrumentation. The experiments encompass material volumes that are typically larger than 1000 μm3, with voxel dimensions approaching tens of nanometers, and can contain structural, chemical, and crystallographic information. This article describes the current state of the art of this experimental methodology and provides examples of specific applications to 3D materials characterization.

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