Intra-valence band transitions in self-assembled InAs∕GaAs quantum dots studied using photocurrent spectroscopy

2006 ◽  
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J. W. Cockburn ◽  
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J.A. Barker ◽  
...  

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G. Abstreiter

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...  

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Y. Léger ◽  
L. Besombes ◽  
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H. Mariette

1999 ◽  
Vol 571 ◽  
Author(s):  
P.W. Fry ◽  
I.E. Itskevich ◽  
D.J. Mowbray ◽  
M.S. Skolnick ◽  
J.A. Barker ◽  
...  

ABSTRACTPhotocurrent spectroscopy of InAs/GaAs self-assembled quantum dots, studied as a function of applied electric field, is used to probe the nature of the confined electronic states. A field asymmetry of the quantum confined Stark effect is observed, consistent with the dots possessing a permanent dipole moment. The sign of this dipole indicates that for zero field the hole wavefunction lies above that of the electron, in disagreement with the predictions of all recent calculations. Comparison with a theoretical model demonstrates that the experimentally determined alignment of the electron and hole can only be explained if the dots contain a nonzero and non-uniform Ga content. The role of two different carrier escape mechanisms, tunneling and thermal excitation, is studied.


2006 ◽  
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M. Simma ◽  
T. Fromherz ◽  
A. Raab ◽  
G. Springholz ◽  
G. Bauer

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M. D. Teodoro ◽  
V. Lopez-Richard ◽  
C. Calseverino ◽  
A. Malachias ◽  
...  

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L. Besombes ◽  
L. Maingault ◽  
H. Mariette

2001 ◽  
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pp. 2327-2329 ◽  
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P. Boucaud ◽  
T. Brunhes ◽  
V. Immer ◽  
E. Finkman ◽  
...  

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