scholarly journals Electrical properties of (Ba,Sr)TiO3 thin films revisited: The case of chemical vapor deposited films on Pt electrodes

2006 ◽  
Vol 99 (11) ◽  
pp. 114108 ◽  
Author(s):  
Peter Ehrhart ◽  
Reji Thomas
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Chemical Vapor ◽  
Pt Electrodes ◽  
Chemical Vapor Deposited ◽  
Deposited Films

Furnace Annealed Thin Films of Plasma Enhanced Chemical Vapor Deposited Titanium Borides on Silicon

1986 ◽  
Vol 71 ◽  
Author(s):  
L. M. Williams
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Titanium Borides ◽  
Chemical Vapor Deposited ◽  
Diffraction Peaks ◽  
By Products ◽  
Deposited Films ◽  
Anneal Time

AbstractThin films of titanium borides, deposited onto silicon substrates at 600 °C using plasma enhanced chemical vapor deposition, were annealed in a furnace at temperatures from 700 °(C to 990 °C. Structural properties and electronic properties were measured for the annealed films and the asdeposited films for comparison. Sheet resistances for the films show about a 35% decrease after anneals at 990 °(C. The reduction in sheet resistance appears to be relatively insensitive to the length of the anneal time. X-ray diffraction spectra of the as-deposited films show no peaks that are attributable to crystalline titanium borides; however, there are diffraction peaks that are believed to be caused by products from reactions between the titanium borides and the silicon substrate during deposition. There is evidence that crystalline titanium diboride may start to form during the anneal at 990 °C.

Residual Stress Variation in Polysilicon Thin Films

2006 ◽  
Author(s):  
Andrew J. Mueller ◽  
Robert D. White
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Compressive Stress ◽  
Chemical Vapor ◽  
Stress Variation ◽  
Wafer Curvature ◽  
Mechanical Methods ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Deposited Films

This paper compares the use of four mechanical methods for characterization of residual stress variation in low pressure chemical vapor deposited (LPCVD) polysilicon thin films deposited, doped, and annealed under different conditions. Stress was determined using buckling structures, vibrating microstructures, static rotating structures and the wafer curvature method. After deposition of 1.0 μm of polysilicon at 625°C and 588°C the stress in the wafers is 230 MPa compressive (stdev = 1.2 MPa) and 340 MPa compressive (stdev = 10.4 MPa), respectively. Deposition of 0.6 μm at 580°C results in a tensile stress of 66 MPa (stdev= 52 MPa). Following doping, all stresses are compressive. Boron doping of the 625°C and 588°C deposited films produces a compressive stress of 149 MPa (stdev= 28.6 MPa) and 100 MPa (stdev= 29.5 MPa). Phosphorous doping of the 588°C and 580°C deposited films produces a compressive stress of 54 MPa (stdev = 0.3 MPa) and 80 MPa (stdev= 5.3 MPa), respectively. Annealing through rapid thermal processing (RTP) at temperatures of 1000°C – 1100°C reduced the stresses by 20-50 MPa, but the stresses remained compressive. These values are measured using the wafer curvature method. Values obtained from the other microstructure methods agree with stresses determined by wafer curvature with the exception of the rotating structures which showed 20% lower stress readings.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

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