Temperature dependence of reverse-bias leakage current in GaN Schottky diodes as a consequence of phonon-assisted tunneling

2006 ◽  
Vol 99 (9) ◽  
pp. 093709 ◽  
Author(s):  
P. Pipinys ◽  
V. Lapeika
Keyword(s):  
Temperature Dependence ◽  
Leakage Current ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Assisted Tunneling

scholarly journals Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

2010 ◽  
Vol 2010 ◽  
pp. 1-7 ◽  
Author(s):  
P. Pipinys ◽  
V. Lapeika
Keyword(s):  
Temperature Dependence ◽  
Leakage Current ◽  
Reverse Bias ◽  
Electron Tunneling ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Model Temperature

Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT) model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K) using for calculation the effective mass of 0.222 . and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy) are also explicable in the framework of the PhAT model.

Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects

2010 ◽  
Vol 645-648 ◽  
pp. 343-346
Author(s):  
Bernd Zippelius ◽  
Michael Krieger ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
Hiroyuki Nagasawa ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Leakage Current ◽  
Reverse Bias ◽  
Stacking Faults ◽  
Thermal Barrier ◽  
Extended Defects ◽  
Voltage Range ◽  
Thermally Activated ◽  
Assisted Tunneling ◽  
Large Leakage Current

A large leakage current (IR) is observed at reverse bias (VR) in 3C-SiC p+-n diodes. This leakage current is caused by a high density of stacking faults (SFs). The temperature dependence of IR is studied in the temperature range from 100 K to 295 K. It turns out that IR is thermally activated for reverse voltages VR  |170| V. We propose that within this voltage range IR originates from thermally assisted tunneling of electrons and holes from band-like states of the SFs into the conduction and valence band. For VR > |170| V, the thermal barrier is strongly reduced and direct tunneling dominates. These dependences are simulated in the framework of a simplified model.

scholarly journals Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment

2003 ◽  
Vol 82 (8) ◽  
pp. 1293-1295 ◽  
Author(s):  
E. J. Miller ◽  
D. M. Schaadt ◽  
E. T. Yu ◽  
P. Waltereit ◽  
C. Poblenz ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Leakage Current ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Current Reduction ◽  
Electrochemical Surface Treatment

Si1-xCx/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current

2015 ◽  
Vol 821-823 ◽  
pp. 571-574
Author(s):  
Gerard Colston ◽  
Maksym Myronov ◽  
Stephen Rhead ◽  
Vishal A. Shah ◽  
Yogesh Sharma ◽  
...  
Keyword(s):  
Power Electronics ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Schottky Diode ◽  
High Power ◽  
Reverse Bias ◽  
Lattice Mismatch ◽  
Schottky Diodes ◽  
Crystalline Quality ◽  
The Impact

Vertical Schottky diodes have been fabricated on low C content Si1-xCxand 3C-SiC epilayers epitaxially grown on Si(001) substrates. Significant leakage current was observed in 3C-SiC diodes under reverse bias, masking any rectifying behavior. This issue is far less pronounced in Si1-xCxbased Schottky diodes which demonstrate a clear critical breakdown. Leakage current is shown to be greater in relaxed Si1-xCxlayers. While crystalline Si1-xCxis not currently a viable material for high power electronics it is useful for assessing the impact lattice mismatch and crystalline quality has on the behavior of rectifiers.

Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes

2011 ◽  
Vol 679-680 ◽  
pp. 571-574 ◽  
Author(s):  
Bernd Zippelius ◽  
Michael Krieger ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
Hiroyuki Nagasawa ◽  
...  
Keyword(s):  
Leakage Current ◽  
Reverse Bias ◽  
Reverse Current ◽  
Thermal Barrier ◽  
Tunneling Model ◽  
Shunt Resistance ◽  
Barrier Heights ◽  
Model Based ◽  
Assisted Tunneling

The dependence of the reverse current of 3C-SiC p+-n diodes on the temperature and on the reverse bias is measured and a model based on thermally-assisted tunneling is proposed to explain the dominating mechanism responsible for the leakage current. Taking into account an additional ohmic shunt resistance, the experimental reverse characteristics and thermal barrier heights B can sufficiently be reproduced.

APPLICATION OF EPITAXIAL UNIPOLAR BARRIERS TO REDUCE NOISE CURRENTS IN PHOTODETECTORS

2011 ◽  
Vol 20 (03) ◽  
pp. 557-564
Author(s):  
G. R. SAVICH ◽  
J. R. PEDRAZZANI ◽  
S. MAIMON ◽  
G. W. WICKS
Keyword(s):  
Leakage Current ◽  
Surface Passivation ◽  
Leakage Currents ◽  
Type Region ◽  
Surface Leakage Current ◽  
Unipolar Barrier ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Tunneling Currents ◽  
Surface Leakage

Tunneling currents and surface leakage currents are both contributors to the overall dark current which limits many semiconductor devices. Surface leakage current is generally controlled by applying a post-epitaxial passivation layer; however, surface passivation is often expensive and ineffective. Band-to-band and trap assisted tunneling currents cannot be controlled through surface passivants, thus an alternative means of control is necessary. Unipolar barriers, when appropriately applied to standard electronic device structures, can reduce the effects of both surface leakage and tunneling currents more easily and cost effectively than other methods, including surface passivation. Unipolar barriers are applied to the p -type region of a conventional, MBE grown, InAs based pn junction structures resulting in a reduction of surface leakage current. Placing the unipolar barrier in the n -type region of the device, has the added benefit of reducing trap assisted tunneling current as well as surface leakage currents. Conventional, InAs pn junctions are shown to exhibit surface leakage current while unipolar barrier photodiodes show no detectable surface currents.

Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability

2005 ◽  
Vol 483-485 ◽  
pp. 925-928 ◽  
Author(s):  
Roland Rupp ◽  
Michael Treu ◽  
Peter Türkes ◽  
H. Beermann ◽  
Thomas Scherg ◽  
...  
Keyword(s):  
Leakage Current ◽  
Power Dissipation ◽  
Schottky Diodes ◽  
Physical Structure ◽  
Active Area ◽  
Clear Correlation ◽  
Local Power ◽  
Degradation Mechanisms ◽  
Failure Simulation

Other than open micropipes (MP), overgrown micropipes do not necessarily lead to a^significantly reduced blocking capability of the affected SiC device. However they can lead to a degradation of the device during operation. In this paper the physical structure of overgrown micropipes will be revealed and their contribution to the leakage current will be shown. The possible impact of the high local power dissipation in the surrounding of the overgrown micropipe will be discussed and long term degradation mechanisms will be described. Failure simulation under laboratory conditions shows a clear correlation between the position of overgrown micropipes and the location of destructive burnt spots.

Sign in / Sign up

Export Citation Format

Share Document