Role of titanium and silicon dioxide in amorphous silicon nanowire growth by solid state reaction

2006 ◽  
Vol 88 (17) ◽  
pp. 173111 ◽  
Author(s):  
Youngsik Song ◽  
Jaewu Choi
NANO ◽  
2006 ◽  
Vol 01 (02) ◽  
pp. 159-165 ◽  
Author(s):  
YOUNGSIK SONG ◽  
JAEWU CHOI

Role of titanium capping layer in synthesis of amorphous silicon nanowires by solid-state reaction was studied by Raman spectroscopy, energy dispersive spectroscopy, scanning electron microscopy and transmission electron microscopy. Silicon nanowires were not grown from 20nm thick nickel film on silicon (100) but grown from 20nm thick nickel film on silicon (100) with 100 nm thick titanium capping layer. The study shows that titanium capping layer plays an important role in formation of Ni–Ti–Si ternary alloy, which acts as a nucleation seed and a promoter for silicon nanowire growth.


2012 ◽  
Vol 95 (12) ◽  
pp. 3871-3877 ◽  
Author(s):  
Le Zhang ◽  
Zhou Lu ◽  
Pengde Han ◽  
Jiajia Lu ◽  
Naicen Xu ◽  
...  

2005 ◽  
pp. 3808 ◽  
Author(s):  
Seiken Nakamatsu ◽  
Shinji Toyota ◽  
William Jones ◽  
Fumio Toda

2005 ◽  
Vol 94 (2-3) ◽  
pp. 401-407 ◽  
Author(s):  
Chang Liu ◽  
Xiaohua Lu ◽  
Gang Yu ◽  
Xin Feng ◽  
Qitu Zhang ◽  
...  

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