Preparation of La-doped BiFeO3 thin films with Fe2+ ions on Si substrates

2006 ◽  
Vol 99 (9) ◽  
pp. 094105 ◽  
Author(s):  
F. Gao ◽  
C. Cai ◽  
Y. Wang ◽  
S. Dong ◽  
X. Y. Qiu ◽  
...  
Keyword(s):  
Thin Films ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
La Doped

Phase transition and piezoelectricity of sol–gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Orthorhombic Phase ◽  
High Quality ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Gel Processing

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 114-117
Author(s):  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm , respectively.

Room temperature ferromagnetism and ferroelectricity in strained multiferroic BiFeO3 thin films on La0.7Sr0.3MnO3/SiO2/Si substrates

2017 ◽  
Vol 128 ◽  
pp. 451-464 ◽  
Author(s):  
M.C. Ramírez-Camacho ◽  
C.F. Sánchez-Valdés ◽  
J.J. Gervacio-Arciniega ◽  
R. Font ◽  
C. Ostos ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Multiferroic Bifeo3

Impedance spectroscopy studies on polycrystalline BiFeO3 thin films on Pt/Si substrates

2009 ◽  
Vol 105 (5) ◽  
pp. 054103 ◽  
Author(s):  
Amar Srivastava ◽  
Ashish Garg ◽  
Finlay D. Morrison
Keyword(s):  
Thin Films ◽  
Impedance Spectroscopy ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Spectroscopy Studies

scholarly journals Highly textured Sr, Nb co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf- sputtering

2011 ◽  
Vol 110 (2) ◽  
pp. 024114 ◽  
Author(s):  
C. Ostos ◽  
O. Raymond ◽  
N. Suarez-Almodovar ◽  
D. Bueno-Baqués ◽  
L. Mestres ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Co Doped

Electrical Characterization and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2011 ◽  
Vol 412 ◽  
pp. 318-321
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
R.F. Liu ◽  
Y.H. Sun ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
La Doping ◽  
Si Substrates ◽  
Lower Temperature ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. La-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that La doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BLT film with x=0.75 were 20 μC/cm2 and 82kV/cm, respectively.

A Strain-Driven Antiferroelectric-to-Ferroelectric Phase Transition in La-Doped BiFeO3 Thin Films on Si

Nano Letters ◽  
2017 ◽  
Vol 17 (9) ◽  
pp. 5823-5829 ◽  
Author(s):  
Deyang Chen ◽  
Christopher T. Nelson ◽  
Xiaohong Zhu ◽  
Claudy R. Serrao ◽  
James D. Clarkson ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Ferroelectric Phase Transition ◽  
Ferroelectric Phase ◽  
Bifeo3 Thin Films ◽  
La Doped

Nonvolatile bipolar resistance switching effects in multiferroic BiFeO3 thin films on LaNiO3-electrodized Si substrates

2010 ◽  
Vol 100 (4) ◽  
pp. 987-990 ◽  
Author(s):  
Xinman Chen ◽  
Guangheng Wu ◽  
Hailei Zhang ◽  
Ni Qin ◽  
Tao Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistance Switching ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Multiferroic Bifeo3 ◽  
Bipolar Resistance Switching

Magnetic and structural properties of BiFeO3 thin films grown epitaxially on SrTiO3/Si substrates

2013 ◽  
Vol 113 (17) ◽  
pp. 17D919 ◽  
Author(s):  
Ryan P. Laughlin ◽  
Daniel A. Currie ◽  
Rocio Contreras-Guererro ◽  
Aruna Dedigama ◽  
Weerasinghe Priyantha ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Si Substrates ◽  
Bifeo3 Thin Films
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