Magnetic and structural properties of BiFeO3 thin films grown epitaxially on SrTiO3/Si substrates

2013 ◽  
Vol 113 (17) ◽  
pp. 17D919 ◽  
Author(s):  
Ryan P. Laughlin ◽  
Daniel A. Currie ◽  
Rocio Contreras-Guererro ◽  
Aruna Dedigama ◽  
Weerasinghe Priyantha ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Si Substrates ◽  
Bifeo3 Thin Films

Phase transition and piezoelectricity of sol–gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Orthorhombic Phase ◽  
High Quality ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Gel Processing

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

Room temperature ferromagnetism and ferroelectricity in strained multiferroic BiFeO3 thin films on La0.7Sr0.3MnO3/SiO2/Si substrates

2017 ◽  
Vol 128 ◽  
pp. 451-464 ◽  
Author(s):  
M.C. Ramírez-Camacho ◽  
C.F. Sánchez-Valdés ◽  
J.J. Gervacio-Arciniega ◽  
R. Font ◽  
C. Ostos ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Multiferroic Bifeo3

scholarly journals Process Oxygen Flow Influence on the Structural Properties of Thin Films Obtained by Co-Sputtering of (TeO2)x-ZnO and Au onto Si Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1863
Author(s):  
Leonardo Bontempo ◽  
Sebastião G. dos Santos Filho ◽  
Luciana R. P. Kassab
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Single Phase ◽  
Oxygen Flow ◽  
Oxidizing Agent ◽  
Tellurium Oxide ◽  
Si Substrates ◽  
Β Phase ◽  
Α Phase ◽  
Electrochemical Mechanism

In this study, we investigated the structural properties of TeO2-ZnO (TZ) and TeO2-ZnO-Au (TZA) thin films sputtered under different oxygen concentrations and either annealed or not annealed at 325 °C in air for 10 or 20 h. The lattice changes of the tellurium oxide were shown to be inherent in the polymorph properties of the α and β phases. The β phase was formed for null oxygen flow and the α phase was formed for different oxygen flows (0.5–7.0 sccm) during TZ and TZA sputtering. Au was encountered in its single phase or as AuTe2. The annealing had very little influence on the α and β phases for both TZ and TZA. It is worth noting that SiO2 and orthotellurate anions are both formed for not-null oxygen flow. An electrochemical mechanism was proposed to explain the SiO2 growth at the TZ/Si or TZA/Si interface, taking the orthotellurate anion as oxidizing agent into account.

Impedance spectroscopy studies on polycrystalline BiFeO3 thin films on Pt/Si substrates

2009 ◽  
Vol 105 (5) ◽  
pp. 054103 ◽  
Author(s):  
Amar Srivastava ◽  
Ashish Garg ◽  
Finlay D. Morrison
Keyword(s):  
Thin Films ◽  
Impedance Spectroscopy ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Spectroscopy Studies

scholarly journals Highly textured Sr, Nb co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf- sputtering

2011 ◽  
Vol 110 (2) ◽  
pp. 024114 ◽  
Author(s):  
C. Ostos ◽  
O. Raymond ◽  
N. Suarez-Almodovar ◽  
D. Bueno-Baqués ◽  
L. Mestres ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Co Doped

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

Nonvolatile bipolar resistance switching effects in multiferroic BiFeO3 thin films on LaNiO3-electrodized Si substrates

2010 ◽  
Vol 100 (4) ◽  
pp. 987-990 ◽  
Author(s):  
Xinman Chen ◽  
Guangheng Wu ◽  
Hailei Zhang ◽  
Ni Qin ◽  
Tao Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistance Switching ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Multiferroic Bifeo3 ◽  
Bipolar Resistance Switching
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