The role of charge trapping at grain boundaries on charge transport in polycrystalline chemical vapor deposited diamond based detectors

2006 ◽  
Vol 99 (11) ◽  
pp. 113703 ◽  
Author(s):  
S. M. Hearne ◽  
E. Trajkov ◽  
D. N. Jamieson ◽  
J. E. Butler ◽  
S. Prawer
Keyword(s):  
Charge Transport ◽  
Grain Boundaries ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
Chemical Vapor Deposited

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

scholarly journals Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Xibiao Ren ◽  
Jichen Dong ◽  
Peng Yang ◽  
Jidong Li ◽  
Guangyuan Lu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Grain Boundaries ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Grain-Size-Dependent Thermal Transport Properties in Nanocrystalline Yttria-Stabilized Zirconia

2001 ◽  
Vol 703 ◽  
Author(s):  
Ho-Soon Yang ◽  
J.A. Eastman ◽  
L.J. Thompson ◽  
G.-R. Bai
Keyword(s):  
Grain Boundaries ◽  
Thermal Transport ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Stabilized Zirconia ◽  
Size Dependent ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTUnderstanding the role of grain boundaries in controlling heat flow is critical to the success of many envisioned applications of nanocrystalline materials. This study focuses on the effect of grain boundaries on thermal transport behavior in nanocrystalline yttria-stabilized zirconia (YSZ) coatings prepared by metal-organic chemical vapor deposition.

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

scholarly journals Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
W. J. Liu ◽  
L. Chen ◽  
P. Zhou ◽  
Q. Q. Sun ◽  
H. L. Lu ◽  
...  
Keyword(s):  
Flash Memory ◽  
Room Temperature ◽  
Metal Layer ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
Memory Device ◽  
Water Molecules ◽  
Oh Groups ◽  
Chemical Vapor Deposited ◽  
A Charge

We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.

Effect of grain boundaries on carrier lifetime in chemical-vapor-deposited diamond film

2000 ◽  
Vol 77 (10) ◽  
pp. 1425-1427 ◽  
Author(s):  
Hitoki Yoneda ◽  
Kazutatsu Tokuyama ◽  
Riichi Yamazaki ◽  
Ken-ichi Ueda ◽  
Hironori Yamamoto ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Diamond Film ◽  
Carrier Lifetime ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Domain Architectures and Grain Boundaries in Chemical Vapor Deposited Highly Anisotropic ReS2 Monolayer Films

Nano Letters ◽  
2016 ◽  
Vol 16 (9) ◽  
pp. 5888-5894 ◽  
Author(s):  
Kedi Wu ◽  
Bin Chen ◽  
Sijie Yang ◽  
Gang Wang ◽  
Wilson Kong ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Chemical Vapor ◽  
Monolayer Films ◽  
Chemical Vapor Deposited

scholarly journals Enhanced mobility of hydrogenated MO-LPCVD ZnO contacts for high performances thin film silicon solar cells

2012 ◽  
Vol 1426 ◽  
pp. 51-56 ◽  
Author(s):  
L. Ding ◽  
M. Benkhaira ◽  
S. Nicolay ◽  
C. Ballif
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Complete Suppression ◽  
Chemical Vapor Deposited ◽  
Defect Passivation ◽  
Pressure Chemical ◽  
Enhanced Mobility ◽  
Silicon Device

ABSTRACTIn this contribution, we study the increase in metalorganic-low pressure chemical vapor deposited (MO-LPCVD) ZnO thin films conductivity by hydrogen plasma post-treatment. We show that this improvement is linked to defect passivation at grain boundaries, decreasing the electron traps density and resulting in the almost complete suppression of the electron scattering at grain boundaries. For a 2 μm thick non-intentionally doped ZnO layer, electron mobility reaches after treatment values close to 60 cm2V-1s-1 (corresponding to an increase of 100%), with a carrier density still as low as 3 x1019 cm-3 (+1.5 x1019 cm-3). Such layers have an absorbance below 2-3% in the range of 400 to 1100 nm making them among the most transparent and conductive materials reported so far. In addition, we demonstrate that hydrogen plasma post-treated ZnO layers can be used as front electrode for producing highly transparent and conductive electrodes. Eventually, it is shown that hydrogen plasma treatment can also be used on the complete thin film solar cell stack (back contact and silicon device) to improve the cell performances.

Sign in / Sign up

Export Citation Format

Share Document