Ni Schottky diodes on cubic GaN

2006 ◽  
Vol 88 (15) ◽  
pp. 152112 ◽  
Author(s):  
D. J. As ◽  
S. Potthast ◽  
J. Fernandez ◽  
J. Schörmann ◽  
K. Lischka ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Cubic Gan

scholarly journals X-ray detection with zinc-blende (cubic) GaN Schottky diodes

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
T. Gohil ◽  
J. Whale ◽  
G. Lioliou ◽  
S. V. Novikov ◽  
C. T. Foxon ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
X Ray ◽  
Zinc Blende ◽  
Cubic Gan

Mechanism of Current Leakage in Ni Schottky Diodes on Cubic GaN and AlxGa1-xN Epilayers

2005 ◽  
Vol 892 ◽  
Author(s):  
Donat J. As ◽  
Stefan Potthast ◽  
Jara Fernandez ◽  
Klaus Lischka ◽  
Hiroyuki Nagasawa ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Thermionic Emission ◽  
Surface Barrier ◽  
Free Standing ◽  
Semiconductor Interface ◽  
Doping Density ◽  
Group Iii ◽  
Force Microscopy ◽  
Cubic Gan ◽  
Group Iii Nitride

AbstractNi Schottky-diodes (SDs) 300 μm in diameter were fabricated by thermal evaporation using contact lithography on cubic GaN and AlxGa1-xN epilayers. Phase-pure cubic GaN and c-Al0.3Ga0.7N/GaN structures were grown by plasma assisted molecular beam epitaxy (MBE) on 200 µm thick free-standing 3C-SiC (100) substrates. The quality of the cubic group III-nitride epilayers was checked by high resolution X-ray diffractometry, atomic force microscopy and photoluminescence at room temperature and at 2 K. Large deviations from the thermionic emission transport were observed in the current voltage (I-V) behavior of these SDs. Detailed analysis of the I-V characteristics at 300 K and at low temperature showed that a thin surface barrier is formed at the Ni semiconductor interface. Thermal annealing in air at 200°C alters the composition of this thin surface barrier and reduces the leakage current by three orders of magnitude. The doping density dependence of breakdown voltages derived from the reverse breakdown voltage characteristics of c-GaN SDs is in good agreement with theoretically calculated values and follows the expected trend. From these experimental data a blocking voltage of higher than 600V is extrapolated for c-GaN films with a doping level of ND = 5×1015 cm-3.

Schottky diodes based on 2D materials for environmental gas monitoring: a review on emerging trends, recent developments and future perspectives

2021 ◽  
Author(s):  
Minu Mathew ◽  
Chandra Sekhar Rout
Keyword(s):  
Gas Sensing ◽  
2D Materials ◽  
Schottky Diodes ◽  
High Sensitivity ◽  
Future Perspectives ◽  
Working Temperature ◽  
Emerging Trends ◽  
Gas Sensing Properties ◽  
Recent Developments ◽  
Sensitivity And Selectivity

This review details the fundamentals, working principles and recent developments of Schottky junctions based on 2D materials to emphasize their improved gas sensing properties including low working temperature, high sensitivity, and selectivity.

Heteroepitaxy of Cubic GaN

1997 ◽  
Vol 7 (12) ◽  
pp. 2309-2316 ◽  
Author(s):  
A. Trampert ◽  
O. Brandt ◽  
H. Yang ◽  
K. H. Ploog
Keyword(s):  
Cubic Gan

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

The Use of TMAH to Etch Silicon and Expose Metal Bridging Failures

2000 ◽  
Author(s):  
Mark Morris ◽  
James Mohr ◽  
Esteban Ortiz ◽  
Steven Englebretson
Keyword(s):  
Failure Mechanism ◽  
Schottky Diodes ◽  
Tetramethylammonium Hydroxide ◽  
Novel Approach ◽  
Failure Location ◽  
Metal Etching ◽  
Plastic Mold

Abstract Determination of metal bridging failures on plastic encapsulated devices is difficult due to the metal etching effects that occur while removing many of the plastic mold compounds. Typically, the acids used to remove the encapsulation are corrosive to the metals that are found within the device. Thus, decapsulation can result in removal of the failure mechanism. Mechanical techniques are often not successful due to damage that results in destruction of the die and failure mechanism. This paper discusses a novel approach to these types of failures using a silicon etch and a backside evaluation. The desirable characteristics of the technique would be to remove the silicon and leave typical device metals unaffected. It would also be preferable that the device passivation and oxides not be etched so that the failure location is not disturbed. The use of Tetramethylammonium Hydroxide (TMAH), was found to fit these prerequisites. The technique was tested on clip attached Schottky diodes that exhibited resistive shorting. The use of the TMAH technique was successful at exposing thin solder bridges that extruded over the edge of the die resulting in failure.

Measurements of the electron accumulation on two Schottky diodes connected metal to metal

1977 ◽  
Vol 13 (17) ◽  
pp. 495
Author(s):  
Nobuo Hashizume ◽  
Shoei Kataoka ◽  
Kazutaka Tomizawa
Keyword(s):  
Schottky Diodes ◽  
Electron Accumulation

Increased breakdown voltage of silicon-on-insulator Schottky diodes

1993 ◽  
Vol 29 (15) ◽  
pp. 1381 ◽  
Author(s):  
B.R. Kang ◽  
S.N. Yoon ◽  
Y.H. Cho ◽  
S.I. Cha ◽  
Y.I. Choi
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Silicon On Insulator
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