scholarly journals Role of poly(styrene-acrylonitrile) copolymer interface layer in controlling charge storage and decay properties of amorphous selenium films

2006 ◽  
Vol 88 (21) ◽  
pp. 213506 ◽  
Author(s):  
S. Chand ◽  
G. D. Sharma ◽  
S. Dwivedi
Keyword(s):  
Interface Layer ◽  
Amorphous Selenium ◽  
Charge Storage ◽  
Acrylonitrile Copolymer ◽  
Decay Properties ◽  
Selenium Films ◽  
Styrene Acrylonitrile

Effect of polyvinylcarbazole barrier layer on charge storage in amorphous selenium films

1999 ◽  
Vol 75 (5) ◽  
pp. 621-623 ◽  
Author(s):  
Suresh Chand ◽  
G. D. Sharma ◽  
S. Dwivedi
Keyword(s):  
Barrier Layer ◽  
Amorphous Selenium ◽  
Charge Storage ◽  
Selenium Films

Light-induced changes in amorphous selenium films containing Sb additives

1999 ◽  
Vol 4 (0) ◽  
pp. 99-101
Author(s):  
V. I. Mikla ◽  
I. P. Mikhalko ◽  
V. V. Mikla ◽  
Yu. Yu. Nagy
Keyword(s):  
Amorphous Selenium ◽  
Selenium Films ◽  
Induced Changes

The Dispersion of MWCNTS in Acetone Solution of SAN

2015 ◽  
Vol 1088 ◽  
pp. 8-12
Author(s):  
Xin Long Ling ◽  
Ling Jiao Xie ◽  
Li Ming Zou ◽  
Yi Zhe Wei
Keyword(s):  
Particle Size ◽  
Average Particle Size ◽  
Acetone Solution ◽  
Average Particle ◽  
Ultrasonic Power ◽  
Acrylonitrile Copolymer ◽  
Mass Percent ◽  
Ultrasonic Time ◽  
Styrene Acrylonitrile

MWCNTs were dispersed in acetone solution of styrene-acrylonitrile copolymer (SAN). Four factors which had effect on the average particle size, including the ratio of MWCNTs to SAN, the mass percent of MWCNTs, the ultrasonic power and the ultrasonic time, were studied. The optimal dispersion conditions of MWCNTs in acetone solution of SAN were the ratio of MWCNTs to SAN 1:3, the mass percent of MWCNTs 0.25%, the ultrasonic power 100%, and the ultrasonic time 30 min.

Retrieval of optical constants of undoped amorphous selenium films from an analysis of their normal-incidence transmittance spectra using numeric PUMA method

2015 ◽  
Vol 27 (4) ◽  
pp. 3281-3291 ◽  
Author(s):  
Mousa M. Abdul-Gader Jafar ◽  
Mahmoud H. Saleh ◽  
Mais Jamil A. Ahmad ◽  
Basim N. Bulos ◽  
Tariq M. Al-Daraghmeh
Keyword(s):  
Optical Constants ◽  
Normal Incidence ◽  
Amorphous Selenium ◽  
Transmittance Spectra ◽  
Selenium Films

Deep intrinsic and photostructural defect levels in amorphous selenium films

1991 ◽  
Vol 70 (9) ◽  
pp. 5122-5124 ◽  
Author(s):  
Suresh Chand ◽  
R. C. Bhatheja ◽  
G. D. Sharma ◽  
Subhas Chandra
Keyword(s):  
Amorphous Selenium ◽  
Selenium Films ◽  
Defect Levels

Retarded Growth of Sputtered HfO2 Films on Germanium

2004 ◽  
Vol 811 ◽  
Author(s):  
Koji Kita ◽  
Masashi Sasagawa ◽  
Masahiro Toyama ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Film Growth ◽  
Early Stage ◽  
Gate Oxide ◽  
Interface Layer ◽  
Film Deposition ◽  
Si Substrate ◽  
Equivalent Thickness ◽  
Ternary Compounds ◽  
Si Substrates

ABSTRACTHfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

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