Determination of electron-phonon interaction parameters from time-domain terahertz spectroscopy

2006 ◽  
Vol 88 (14) ◽  
pp. 141910 ◽  
Author(s):  
M. A. Gilmore ◽  
Saeid Kamal ◽  
D. M. Broun ◽  
J. S. Dodge
2015 ◽  
Vol 13 (9) ◽  
pp. 093001-93005 ◽  
Author(s):  
Qijun Liang Qijun Liang ◽  
Gregor Klatt Gregor Klatt ◽  
Nico Kraub Nico Kraub ◽  
Oleksii Kukharenko Oleksii Kukharenko ◽  
Thomas Dekorsy Thomas Dekorsy

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Mingming Yang ◽  
Longlong Wang ◽  
Xiaofen Qiao ◽  
Yi Liu ◽  
Yufan Liu ◽  
...  

Abstract The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.


2007 ◽  
Author(s):  
W. H. Fan ◽  
W. Zhao ◽  
G. H. Cheng ◽  
A. D. Burnett ◽  
P. C. Upadhya ◽  
...  

2004 ◽  
Vol 53 (6) ◽  
pp. 1772
Author(s):  
Hu Ying ◽  
Zhang Cun-Lin ◽  
Shen Jing-Ling ◽  
X. C. Zhang

Author(s):  
Payam Mousavi ◽  
Ian R. Bushfield ◽  
Stéphane Savard ◽  
Frank Haran ◽  
J. Steven Dodge

2001 ◽  
pp. 315-328 ◽  
Author(s):  
P. Haring Bolivar ◽  
M. Brucherseifer ◽  
M. Nagel ◽  
H. P. M. Pellemans ◽  
H. Kurz

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